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Reference : UMR5129-ERWPAR-001
Workplace : GRENOBLE
Date of publication : Monday, February 11, 2019
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 1 April 2019
Proportion of work : Full time
Remuneration : 2530.09 à 2919.72 euros
Desired level of education : PhD
Experience required : Indifferent
The objective of this research project is to develop remote plasma processes allowing isotropic and selective etching of the Si layer with respect to the SiGe layer. This study will be carried out in an industrial etching reactor and the development of the process will be based on characterization techniques such as ellipsometry and X-ray photoelectron spectrometry (XPS)
-Use of a 300mm industrial plasma etching reactor
-Use of material characterizations (XPS, ellipsometry, AFM..)
-Develop and characterize of plasma etching processes
-Fabricate of SiGe nanowires for Gate all around devices
-Analyse and synthetize of results for valorization (publications and communications)
Level: phD or equivalent
This subject requires a taste for experimental work, knowledge of plasma etching processes and characterization of materials including XPS, ellipsometry, electron microscopy and AFM. The candidate must enjoy working in a team while showing autonomy, rigor and dynamism. The candidate must be able to synthesize his work and promote it through publications and conferences.
This work will be carried out at the Laboratory of Microelectronics Technologies (LTM), research laboratory affiliated to the CNRS and the University Grenoble Alpes (UGA) located on the CEA-LETI-MINATEC site in Grenoble.We offer achallenging post-doctoral position in a team focusing on plasma science (dry etching), working on leading-edge technologies in an advanced high-tech environment with many international contacts. It is likely that the effective date of employment is shifted to 01/07/2019
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