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Reference : UMR5129-MARCLO-018
Workplace : GRENOBLE
Date of publication : Tuesday, May 05, 2020
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 1 September 2020
Proportion of work : Full time
Remuneration : between 2648.79 à 3054.06€ gross month
Desired level of education : PhD
Experience required : 1 to 4 years
Ferroelectric memories FeRAM are basically Metal-Insulator-Metal (MIM) capacitors operating with a ferroelectric materials as an insulator. When exposed to an electric field, these materials exhibit a stable modification of their polarization, induced by dipolar moment alignment, in relation to their crystalline microstructure. FeRAM memories show exceptional characteristics, in terms of non-volatility, endurance, speed of writing/reading, energy consumption and immunity to radiations. However, since their scaling down is difficult and materials fabrication highly complex (SBT (SrBi2Ta2O9), PZT (PbZr1−xTixO3 perovskites), FeRAM memories are delayed to flood the market in comparison to competing technologies, such as EEPROM and Flash memories. To date, FeRAM memories with inorganic materials are confined into niche applications such as security very low power micro-controllers.
Quite recently, researchers at LTM have developed an original thin film deposition process based on Plasma Enhanced Atomic Layer Deposition (PE ALD), with the assistance of energetic ions extracted from the plasma with tunable incident energies, induced by a RF substrate biasing polarization kit. Thin Films elaborated with this process exhibit physical properties such as density and morphology which can be tuned as a function of the dose and energy of this ion bombardment during the growth process.
The proposed work will be carried out within a European program frame, whose objectives are to investigate on these FeRAM memories. It involves several French partners, both from academia and industry, as well as microelectronics research centers in Europe. This work consists in investigation the fabrication of HfO2 based ferroelectric thin films with the new process developed at LTM. Experimental conditions have to be optimized carefully and defined in connection with electrical properties. Produced thin films will be integrated into MIM cell memories for electrical characterizations. Required performances are low leakage currents for improved retention times, high remnant polarization for ease of memory reading, as well as endurance larger than 1012 cycles. Initial experiments at LTM show promising results and this work will be used as a starting point.
- Developing and optimizing ALD and PEALD processes
- In situ follow-up by ellipsometry and Optical Emission Spectroscopy
- Ex situ characterizations by XPS, XRR, GIXRD, 4 point, PUND and C(V)/I(V)
- Experiments in a clean room environment
- Applicant with a PhD level in solid state physics or chemistry, or materials engineering
- Experience in thin film elaboration technologies, with a preference for ALD/PEALD processes
- Physical, chemical, electrical characterization background
- Clean room experience
- Strong interpersonal skills ; numerous interactions with partners, through oral and written reports
This work will be carried out in a clean room environment, under the supervision of Marceline Bonvalot and Ahmad Bsiesy (thin film elaboration experts).
LTM is a French Research Laboratory involving 4 teams in the field of advances micro and nanotechnologies.
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