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CDD PhD student in physics of materials M / F

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Français - Anglais

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General information

Reference : UPR10-MICPEF-019
Workplace : VALBONNE
Date of publication : Friday, April 10, 2020
Scientific Responsible name : Philippe BOUCAUD
Type of Contract : PhD Student contract / Thesis offer
Contract Period : 36 months
Start date of the thesis : 1 October 2020
Proportion of work : Full time
Remuneration : 2 135,00 € gross monthly

Description of the thesis topic

III-nitride semiconductors like GaN are wide bandgap semiconductors present in our daily life like for example in light emitting diodes (LEDs). Thanks to their intrinsic properties, the III-nitride materials are ideal candidates to develop more advanced photonics devices as compared to LEDs like integrated photonic circuits operating in the visible spectral range. An example of a simple III-nitride photonic circuit constituted by a microring resonator coupled to a bus waveguide and grating coupler is shown in the image below. Through nonlinear optical interactions, these photonic circuits can generate agile and tunable optical sources like optical parametric oscillators, frequency combs or even entangled photon pairs for quantum technologies.
The objective of this thesis will be to further develop these III-nitride photonic circuits and to demonstrate and investigate the different types of optical sources that can be achieved with this system, i.e. optical parametric oscillators, frequency combs and quantum optical sources.
The PhD candidate will be involved in the design of the photonic circuits, the epitaxial growth of the materials, the processing in clean room environments and the optical characterization of the fabricated devices.

Work Context

The Research Center for Hetero-Epitaxy and its Applications (CRHEA - UPR10) is a CNRS research laboratory specialized in the epitaxy of semiconductor materials with a large prohibited band such as nitrides of element III materials (GaN, AlN), zinc oxide (ZnO), silicon carbide (SiC) and their micro- and nanofabrication in a clean room. CRHEA also studies 2D materials such as graphene or boron nitride.

The main areas covered by CRHEA concern energy transition, communications of the future, the environment and health. CRHEA also carries out fundamental studies in nanosciences and crystal growth.

High energy band gap materials are key elements for power electronics, very high frequency electronics, LED-based lighting and new generations of micro-displays. The visible and ultra-violet laser sources produced at CRHEA have multiple applications for lighting, biophotonics and for water purification. CRHEA is also developing components in the THz field, photonic circuits, advanced optical components based on metasurfaces, applications in spintronics, sensors and is involved in the development of quantum technologies.
The laboratory has eight growth reactors by molecular beam epitaxy and six growth reactors in the vapor phase. It also has tools for structural characterization of materials and a clean room for micro and nanofabrication.

The epitaxy pole brings together the various growth activities which constitute the basis of the research carried out at CRHEA. It is made up of 13 researchers and 8 engineers around epitaxy reactors adapted to the growth of large gap materials, in particular nitrides of elements III, but also SiC and ZnO as well as 2D materials such as graphene.
The different equipment is distinguished by the type of epitaxy method, either by ultra-vacuum molecular jets (MBE / EJM, 8 reactors) or by vapor phase (CVD or MOCVD, 6 reactors).
The Opto team studies the optical and optoelectronic properties of materials based on gallium nitride (GaN) and zinc oxide (ZnO), which are produced by epitaxial growth by vapor phase epitaxy (EPV) and / or by epitaxy under molecular jets (EJM), and develops them in components (LEDs, lasers, detectors…) for potential applications. In particular, by relying on the specificities of these growth techniques and the know-how developed for these two families of materials, the possibility of coupling (EPV-EJM and / or GaN-ZnO) is an exceptional asset worldwide. CRHEA.

Constraints and risks

The candidate should have a training in one or several of the following fields: semiconductor physics, condensed matter physics, optical devices, optical and electrical engineering, quantum physics and quantum technologies, clean room processing. The PhD will be mainly dedicated to experiments and we expect a high motivation of the candidate for clean room processing.
The PhD will be supervised by Philippe Boucaud, senior research associate at CNRS http://www.crhea.cnrs.fr/pages-perso/page-pbo.asp https://publons.com/researcher/1758896/philippe-boucaud/
A co-supervision will be provided by a researcher at C2N in Palaiseau close to Paris.
The PhD is expected to present his result in scientific conferences. He should participate to the Ganex schools for training.

Additional Information

Recruitment deadlines may be extended due to the nationality of the candidate (reception agreement procedures, residence permit, etc.)
The PhD has the same number of vacation as the permanent staff (46 days off per year).

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