Description du sujet de thèse

The project will focus on the integration of perovskite oxide thin films for silicon photonics. In particular, the oxide of choice is KTaNbO3 with record high electro-optic coefficients in bulk form. The first challenge is to obtain it with same outstanding properties in thin film form, then to integrate it in photonic test devices with low optical losses and demonstrate state-of-the-art optical modulators. The objective of the student will be to develop hybrid silicon photonic structures from thin layers provided by our partners and to demonstrate efficient optical and optoelectronic devices.

Contexte de travail

To address the needs of cutting-edge applications in optical communications, it is more and more required to develop innovative linear and nonlinear functionalities in silicon photonics platform. Indeed, the emerging photonic revolution calls upon a new generation of photonic chips that provide an ever-growing number of functionalities, while being smaller, cheaper and less power hungry. Silicon (Si) photonics is usually regarded as the integration and scalability paradigm. However, state-of-the-art silicon photonic components do not suffice to address the requirements of these applications. The need for new and improved functionalities is then driving the research of alternative physical phenomena and materials, which are not accessible today in pure silicon technology. Indeed, as an example, Pockels effect does not exist in silicon while it is at the core of recent stunning demonstrations of key on-chip functionalities, including high-speed and low power consumption optical modulators.

Le poste se situe dans un secteur relevant de la protection du potentiel scientifique et technique (PPST), et nécessite donc, conformément à la réglementation, que votre arrivée soit autorisée par l'autorité compétente du MESR.

Contraintes et risques

Cleanroom work