Reference : IRL2958-NADWER-051
Workplace : METZ
Date of publication : Tuesday, September 20, 2022
Scientific Responsible name : ABDALLAH OUGAZZADEN
Type of Contract : PhD Student contract / Thesis offer
Contract Period : 36 months
Start date of the thesis : 1 November 2022
Proportion of work : Full time
Remuneration : 2 135,00 € gross monthly
Description of the thesis topic
The mechanical release of III-nitride devices using h-BN is a promising approach for heterogeneous integration. Upscaling this technology for industrial level requires solutions that allow a simple pick-and-place technique of selected devices for integration while preserving device performance. A new technology developed at IRL GT-CNRS satisfies both of these requirements. It is based on a lateral control of the h-BN quality, using patterned sapphire with a SiO2 mask, to achieve localized van der Waals epitaxy of high-quality GaN based device structures. After process fabrication, the devices can be individually picked and placed on a foreign substrate without the need for a dicing step. The goal of this project is to use this technology in order to develop processing that will result in mechanically removable ultra-thin (< 10 micron), 50µm long InGaN LEDs that will be mechanically removed from a substrate and packaged onto a flexible device.
The selected candidate will work on the different technologicaal blocks including growth of III-nitride heterostructures that is needed for fabricating MicroLEDs
Constraints and risks
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