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Reference : UPR2940-FLOPOI-062
Workplace : GRENOBLE
Date of publication : Wednesday, November 17, 2021
Type of Contract : FTC Technical / Administrative
Contract Period : 12 months
Expected date of employment : 1 January 2022
Proportion of work : Full time
Remuneration : Between 2109 € and 2226 € according to experience
Desired level of education : 4-year university degree
Experience required : Indifferent
In quantum nanoelectronics, one of the major goals is the use of quantum mechanics for the development of nanoprocessors that are more and more efficient. This requires the ability to control quantum phenomena at the single electron scale within nanostructures. In this context, the degree of freedom of the electron spin has been identified as a potential candidate for the support of quantum information. We can define the elementary block of the nanoprocessor by capturing a single electron (and therefore its spin) inside a quantum dot. The development of a quantum circuit will follow the same methods of microelectronic circuits conception, by connecting the elementary bricks, while respecting the constraints of controlling the individual spins. Nowadays, in quantum dots systems, all the elementary operations required for the functioning of a quantum processor have been demonstrated in trapped spins of AsGa heterostructures. The effort of the spin qubits community turns to the transposition of these demonstrations for trapped spins in silicon structures, whose fabrication is compatible with CMOS industrial processes.
The aim of this project is to develop the post fabrication process and characterization of silicon spin qubits using structures fabricated at the CEA-Leti. The interest is twofold: on one hand it permits a rapid characterization of the structures, on the other hand a way to quickly add new features to manipulate coherently the qubits (electron spin resonance antenna, micro-magnets, …) or to assist the readout (addition of local detectors and memories).
The candidate will benefit from the extensive knowledge of the Néel group in fabricating and characterizing devices with a full access to the clean room facility (ebeam lithography, deposition, etching) and the resources offered by the technical poles (electronics, cryogenics).
- Master diploma
- good knowledge in the following areas: semiconductor devices, nanofabrication techniques, device electrical characterization,
- good written and spoken English skills
- good communication skills, ability of writing reports/articles
- team work
The candidate will join the QuantECA team of the laboratory. The Institut NEEL, UPR 2940 CNRS, is one of the largest French national research institutes for fundamental research in condensed matter physics enriched by interdisciplinary activities at the interfaces with chemistry, engineering and biology. It is located in the heart of a unique scientific, industrial and cultural environment. It is part of one of Europe's biggest high-tech environment in micro- and nanoelectronics, right next to the French Alpes.
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