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Portail > Offres > Offre UPR10-MICPEF-026 - CDD chercheur H/F : Epitaxie par jets moléculaires de matériaux nitrures d'éléments III sur substrat silicium 8''

Researcher position: Molecular beam epitaxy of III-nitrides on 8 '' silicon substrate

This offer is available in the following languages:
Français - Anglais

Date Limite Candidature : vendredi 29 janvier 2021

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General information

Reference : UPR10-MICPEF-026
Workplace : VALBONNE
Date of publication : Friday, January 08, 2021
Type of Contract : FTC Scientist
Contract Period : 6 months
Expected date of employment : 1 March 2021
Proportion of work : Full time
Remuneration : Between € 2,675.28 and € 3,805.92 depending on experience from 1 to 7 years.
Desired level of education : 5-year university degree
Experience required : Indifferent


The candidate will be responsible for the operation of the Riber 49 molecular beam epitaxy reactor. He / she will participate to:
• the production of AlN/Si 8 " composite substrates.
• the structural characterization of thin films (AFM, X-diffraction, C-V measurements, Hall effect) and will analyze the data to optimize the growth process in order to achieve objectives.


He / she will qualify the different equipment of the growth reactor and take care of maintenance.
He / she will train the personnel who will work on the equipment.
The candidate will also have to interact effectively and regularly with the various partners via technical presentations while respecting certain rules of confidentiality when they are required.
The candidate, via an in-depth bibliographic study, will have to acquire a complete scientific expertise in the field of GaN-on-Si structures and their use for the realization of transistors.


-Candidates must absolutely have practical experience in molecular beam epitaxy including in the operation and maintenance of the growth reactor. A good knowledge of III-nitride materials and expertise in material characterization are also desirable. A great methodology and organization skills will be appreciated qualities. Finally, the successful candidate should demonstrate an excellent professional attitude, communication skills, as well as the ability to manage complex projects.

Work Context

The Nano2022/IPCEI collaborative research and development program aims to consolidate the national micro/nanoelectronic industry. It is in this context that STMicroelectronics, project leader, and CRHEA-CNRS in collaboration with the start-up EasyGaN, is participating to the POWEREASY project. The objective of this project is to fabricate, starting from a composite substrate (AlN/Si), transistor structures for power electronics based on GaN on Si, and to show that this composite substrate allow to improve performances of components, as well as facilitate their manufacture and increase production yields. As part of this project, CRHEA-CNRS is looking for a motivated researcher with solid expertise in molecular beam epitaxy. This is a 6-month CNRS position located at CRHEA in Sophia-Antipolis (France). The manufacture of AlN/Si composite substrates by molecular beam epitaxy will then be transferred to the company EasyGaN. This transfer will be facilitated by the fact that the candidate will then be recruited by EasyGaN for at least 24 months. This validation will allow the startup EasyGaN (issued and hosted at CRHEA) to offer an innovative product to facilitate access to GaN-on-Si technology.

Constraints and risks

no particular constraints

Additional Information

application accompanied with a CV as well as the contact details of 3 professional references.

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