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Portail > Offres > Offre UMR7073-MICPEF-089 - CDD Chercheur Fabrication et caractérisation de matrices de détecteurs GaN pour la proton thérapie H/F

Contract Researcher M/F Fabrication and characterization of arrays of GaN based detectors for proton-therapy

This offer is available in the following languages:
- Français-- Anglais

Date Limite Candidature : vendredi 18 juillet 2025 23:59:00 heure de Paris

Assurez-vous que votre profil candidat soit correctement renseigné avant de postuler

Informations générales

Intitulé de l'offre : Contract Researcher M/F Fabrication and characterization of arrays of GaN based detectors for proton-therapy (H/F)
Référence : UMR7073-MICPEF-089
Nombre de Postes : 1
Lieu de travail : VALBONNE
Date de publication : vendredi 27 juin 2025
Type de contrat : Chercheur en contrat CDD
Durée du contrat : 12 mois
Date d'embauche prévue : 1 octobre 2025
Quotité de travail : Complet
Rémunération : €3,021.50 gross monthly for experience of less than 2 years
Niveau d'études souhaité : Doctorat
Expérience souhaitée : Indifférent
Section(s) CN : 08 - Micro et nanotechnologies, micro et nanosystèmes, photonique, électronique, électromagnétisme, énergie électrique

Missions

The goal of this 1-year postdoctoral position is to manufacture and characterize 2D matrices of detectors based on wide bandgap semiconductor GaN. Simultaneously, it will be necessary to develop the interfacing with control and readout electronics to create 128xN matrices. Based on the current expertise, improvements will be made on the number of lines N, to create larger matrices, on the reduction of parasitic elements that will be identified, and if necessary, more innovative solutions will be proposed to enable faster, possibly instantaneous reading of the entire matrix.

Activités

To manufacture detectors in a clean room and define a new set of optimized masks for future detector matrices.
To characterize the detectors and evaluate their performance in a medical environment.
To interface GaN matrices with commercial Si readout circuits in collaboration with partners.
To characterize complete systems under proton flow at CAL, WPE and CYRCE
To publish results in scientific articles and present them at international conferences.

Compétences

The candidate must have experience in clean room technology. He/She must have knowledge of semiconductor physics and associated components. He/She will have a PhD in a field related to semiconductor device technology.

Contexte de travail

The CRHEA-CNRS is a leading laboratory in France and Europe for the epitaxy of wide bandgap materials such as GaN, SiC, and ZnO. CRHEA also has a wide range of structural, optical, and electrical characterization equipment allowing for a comprehensive analysis of materials as well as electronic and optoelectronic components. These devices can be manufactured on-site in the CRHEATEC cleanroom, which is a regional hub for micro-nanotechnologies. This ANR MATRIX project brings together CRHEA and the Antoine Lacassagne Center in Nice, France, and the Ruhr-Bochum University and the WPE proton therapy center in Germany. The project also relies on strong expertise at the IPHC in Strasbourg. The project's goal is to manufacture and develop a detection system that allows for rapid, precise, and robust calibration of the proton beam, initially to ensure quality assurance, but also for other functions such as proton imaging in the future. The general objective is to improve the performance of proton therapy, a cutting-edge tool for cancer treatment.

Le poste se situe dans un secteur relevant de la protection du potentiel scientifique et technique (PPST), et nécessite donc, conformément à la réglementation, que votre arrivée soit autorisée par l'autorité compétente du MESR.