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Contract Researcher M/F Fabrication and characterization of arrays of GaN based detectors for proton-therapy

This offer is available in the following languages:
- Français-- Anglais

Application Deadline : 18 July 2025 23:59:00 Paris time

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General information

Offer title : Contract Researcher M/F Fabrication and characterization of arrays of GaN based detectors for proton-therapy (H/F)
Reference : UMR7073-MICPEF-089
Number of position : 1
Workplace : VALBONNE
Date of publication : 27 June 2025
Type of Contract : Researcher in FTC
Contract Period : 12 months
Expected date of employment : 1 October 2025
Proportion of work : Full Time
Remuneration : €3,021.50 gross monthly for experience of less than 2 years
Desired level of education : Doctorate
Experience required : Indifferent
Section(s) CN : 08 - Micro and nanotechnologies, micro and nanosystems, photonics, electronics, electromagnetism, electrical energy

Missions

The goal of this 1-year postdoctoral position is to manufacture and characterize 2D matrices of detectors based on wide bandgap semiconductor GaN. Simultaneously, it will be necessary to develop the interfacing with control and readout electronics to create 128xN matrices. Based on the current expertise, improvements will be made on the number of lines N, to create larger matrices, on the reduction of parasitic elements that will be identified, and if necessary, more innovative solutions will be proposed to enable faster, possibly instantaneous reading of the entire matrix.

Activities

To manufacture detectors in a clean room and define a new set of optimized masks for future detector matrices.
To characterize the detectors and evaluate their performance in a medical environment.
To interface GaN matrices with commercial Si readout circuits in collaboration with partners.
To characterize complete systems under proton flow at CAL, WPE and CYRCE
To publish results in scientific articles and present them at international conferences.

Skills

The candidate must have experience in clean room technology. He/She must have knowledge of semiconductor physics and associated components. He/She will have a PhD in a field related to semiconductor device technology.

Work Context

The CRHEA-CNRS is a leading laboratory in France and Europe for the epitaxy of wide bandgap materials such as GaN, SiC, and ZnO. CRHEA also has a wide range of structural, optical, and electrical characterization equipment allowing for a comprehensive analysis of materials as well as electronic and optoelectronic components. These devices can be manufactured on-site in the CRHEATEC cleanroom, which is a regional hub for micro-nanotechnologies. This ANR MATRIX project brings together CRHEA and the Antoine Lacassagne Center in Nice, France, and the Ruhr-Bochum University and the WPE proton therapy center in Germany. The project also relies on strong expertise at the IPHC in Strasbourg. The project's goal is to manufacture and develop a detection system that allows for rapid, precise, and robust calibration of the proton beam, initially to ensure quality assurance, but also for other functions such as proton imaging in the future. The general objective is to improve the performance of proton therapy, a cutting-edge tool for cancer treatment.

The position is located in a sector under the protection of scientific and technical potential (PPST), and therefore requires, in accordance with the regulations, that your arrival is authorized by the competent authority of the MESR.