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Portail > Offres > Offre UPR10-MICPEF-024 - CDD Chercheur en optique, modélisations numériques et nanotechnologies H/F

CDD Researcher in optics, digital modeling and nanotechnologies M / F

This offer is available in the following languages:
Français - Anglais

Date Limite Candidature : mercredi 27 janvier 2021

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General information

Reference : UPR10-MICPEF-024
Workplace : VALBONNE
Date of publication : Wednesday, January 06, 2021
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 1 April 2021
Proportion of work : Full time
Remuneration : Between € 2,675.28 and € 3,805.92 for experience from 0 to 7 years
Desired level of education : 5-year university degree
Experience required : 1 to 4 years


Develop devices with metasurfaces tunable in the visible and near infrared to control the properties of light (polarization, intensity, phase profile of the light wavefront). This project will be able to build on the skills acquired during the Doctorate and by working in close collaboration with the members of the ERC FLATLIGHT project at CRHEA.


The candidate will have to address the issue of phase modulation by metasurfaces, i.e. requiring an interface nanostructuring, in the visible and near infrared spectral range. He / she will develop metasurfaces with phase change materials as GST. Implementation of nanostructured devices in the visible and near infrared in order to modulate the control properties of the wave front by playing on the crystallization state of the material.


Metasurfaces, digital models, nanotechnologies. Development of new optical devices for wavefront control.

Work Context

The Research Center for Hetero-Epitaxis and its Applications (CRHEA) is a CNRS research laboratory specializing in the epitaxy of high bandgap semiconductor materials such as element III nitride materials (GaN, AlN) , zinc oxide (ZnO), silicon carbide (SiC) and their micro- and nanofabrication in clean rooms. CRHEA also studies 2D materials such as graphene, or boron nitride.
The major areas covered by CRHEA concern energy transition, future communications, the environment and health. CRHEA also carries out fundamental studies in nanoscience and crystal growth.
High bandgap energy materials are key elements for power electronics, very high frequency electronics, LED-based lighting and new generations of micro-displays. The laser sources operating in the visible and in the Ultra-Violet produced at CRHEA have multiple applications for lighting, biophotonics and for water purification. CRHEA also develops components in the THz field, photonic circuits, advanced optical components based on metasurfaces, applications in spintronics, sensors and is involved in the development of quantum technologies.
The laboratory has eight molecular beam epitaxy growth reactors and six vapor phase growth reactors. It also has tools for the structural characterization of materials and a clean room for micro and nanofabrication.
Context of the integration team:
The combination of top-down and bottom-up approaches makes it possible to exploit all the possibilities offered by nanostructures and this is the strength of the Nanotechnologies team, which uses GaN and ZnO as materials of choice. Our interests range from fundamental materials science, including the MBE and MOCVD growth of new materials (eg ZnMnO, rare earth nitrides and oxynitrides), to the development of more complex nanophotonic systems. These are in particular metasurfaces, which allow the manufacture of ultrathin-ultralight optoelectronic components such as metal lenses, optical microcavities.
These are the ideal playground for testing effects in quantum electrodynamics and obtaining Bose-Einstein condensates in a semiconductor environment. Finally, a final nanophotonic platform based on GaN nanowires is capable of stimulating biological cells with unprecedented spatial resolution. Moreover, the manipulation of the spin of carriers and / or excitons within these photonic structures, thanks to our magnetic materials, opens up the possibility of coupling spin and photons in an electrically addressable interface.

Constraints and risks

Radiation risks

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