Missions

The discovery of new 2D materials with original electronic band structures has initiated a tremendous interest for studying how further modification of their morphology can affect these physical properties. One of the main objectives has been to find alternatives to conventional top-down manufacturing of tailored graphene-based structures originally demonstrating semimetal electronic properties. The bottom-up approach using on-surface reaction of molecular precursor's proved to be an efficient method for growth of one- and two-dimensional graphenic architectures on metal surfaces (e.g., via Ullmann coupling and cyclo-dehydrogenation). Following this strategy, different tailored graphene nanostructures can be elaborated that permit tuning their electronic properties from semimetal to semiconducting.

Inspired by these studies, the project proposed in our group will be focused on the investigation of atomic structure, chemical composition and vibrational properties of tailored graphenic materials that will be grown on surfaces of different nature.

Activities

The study will be mainly conducted in ultra-high vacuum (UHV) condition:
- Substrate's preparation and deposition of molecules on these surfaces by molecular beam epitaxy (MBE);
- Synthesis of graphene-based nanostructures via on-surface reaction;
- Exploring their structures at atomic scale, chemical composition and electronic properties with scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), and scanning tunneling spectroscopy (STS).

The candidate will also be involved in studies at ambient conditions:
- Investigation of vibrational and optical properties of initial molecular precursors and resulting graphenic structure.

Skills

- The candidate should have a strong interest in experimental work. Knowledge of surface science, ultra-high vacuum (UHV) techniques and Scanning Probe Microscopy (SPM) would be clear advantages for this project.
- The candidate should be able to work both independently and in a collaborative environment.
- Good communication skills and knowledge of English are desirable since the candidate might participate in the dissemination of his/her research to the research community: publications in scientific journals, conferences, general public communication, etc.

Work Context

The project will take place at the Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN, https://www.iemn.fr/en/) which is a French major player in the field of micro/nanotechnologies and their applications. The IEMN is part of the Engineering institute of CNRS (http://www.cnrs.fr/index.php) and the Université de Lille (https://www.univ-lille.fr/), and located in the metropolitan area of Lille (110,000 students).
The project will involve several research groups of the Nanostructured Materials and Components Department at IEMN. The main part of the project will be carried out in the Nanostructures, nanoComponents & Molecules (NCM, https://www.iemn.fr/la-recherche/les-groupes/groupe-ncm) group working in the physics of nanostructures and micro/nano-devices made of organic materials, self-assembled monolayers, oxide or iono-electronic materials. In addition, the project will benefit from the facilities available at IEMN such as (i) a multi-physics characterization platform (PCMP) and (ii) a clean room (ISO6 1600 m²). In particular, the candidate will work in the Pôle Microscopie en Champ Proche (PCP) which is one of the hubs of the PCMP platform. PCP brings together the means dedicated to the topographic, physical, and electrical analysis of surfaces from 100μm to the atomic scale such as STM, AFM, KPFM, etc. In summary, the facilities of IEMN cover all areas of micro and nanoelectronics from the elaboration and characterization of nanomaterials to their implementation into advanced nanodevices.

The position is located in a sector under the protection of scientific and technical potential (PPST), and therefore requires, in accordance with the regulations, that your arrival is authorized by the competent authority of the MESR.