Missions

Two-dimensional (2D) materials hold great promise for future nanoelectronics application with field effect transistors (FETs) being ideal biosensing candidates. FETs are three-terminal devices, that use an electric field to control the electrical behaviour and the resistance of a channel (here made by graphene) between two electrodes. The choice of where the gate is positioned becomes of high importance for biosensing applications.1 While the use of back-gating still grabs attention among the sensor community, co-planar gated1, 2 and interdigitated capacitive sensing3, 4 have started to dominate this area. In addition, the size of the bioreceptor will guide the sensing performance.
G-Virals will consider innovative buried back-gated, coplanar-gated, double interdigitated capacitive (DIDC) gFET designs To focus on virus identification by follow-up 3rd generation sequencing will respond to the need to identify the virus and responds to the multipurpose and multitargeting aspect of the project call.

Activities

In the framework of G-virals project consortium, the objective of this post-doc will consist of developping a robust and reliable back-gated GFET. The gain of the device needs to be improve in order to increase sensitivity of the sensors.
The main task will be:
- Improvement of the back-gated FET process (exploration of new gate dielectric in order to reduce its thickness while maintening low gate leakage current)
- Fabriction of back-gated GFETs
- Electrical characterization of back-gated GFET

Skills

- Must have a good technical background in nanofabrication of devices in cleanroom
- Must be self-driven and motivate, and able to solve problems both independently and within a team, using creative thinking and scientific reasoning
- Be a team player open to working and collaborating with colleagues and partners from a range of different backgrounds and disciplines
- An expertise in the field of 2D materials will be a plus

Work Context

The candidate will join the CARBON group at IEMN. IEMN is one of the main national research unit in the field of micro-electronic and nanotechnology. CNRS-IEMN features exceptional technical facilities in nanofabrication and characterization. Its facility includes a 1600 sq meters ISO6 cleanroom with nanofabrication tools, including a new MBE reactor dedicated to TMD growth. The DC and RF electrical characterization platform gathers common equipments for measuring electrical device performances.
The candidate will fabricate the 2D based devices in the IEMN state-of-art clean room facilities. After fabrication, she/he will characterize their DC properties in the IEMN characterization facility which is fully equipped with DC and HF probe stations up to THz range.
Therefore, this project will give the possibility to learn advanced nano-fabrication and electrical characterizations of novel nanodevices.

References
References:
1. Torricelli et al. Nat. Rev. Methods Primers 2021, 1, 66.
2. Sonmez et al. Sci. Rep. 2017, 7, 12190.
3. Sharma et al. ACS Sens. 2021, 6, 3468.
4. Zhang et al. ACS Appl. Mater. Int. 2017, 9, 38863.

The position is located in a sector under the protection of scientific and technical potential (PPST), and therefore requires, in accordance with the regulations, that your arrival is authorized by the competent authority of the MESR.

Constraints and risks

Nothing to report