Missions

The objective of the project is to design, build, and characterize infrared optoelectronic devices operating in the short infrared (i.e., up to 2.5 µm) as well as in the mid-infrared (3–5 µm).
We are particularly interested in controlling the light-matter interaction in these components by introducing the active layers into photonic cavities, either plasmonic either dielectric. The project will focus on both the emission and detection (increasing absorption) of light (improved coupling to the far field). An example of the objective pursued is to make the spectrum of these components reconfigurable post-manufacturing in order to make their spectrum agile.
More punctually, the applicants will be part of measurement at synchrotron using method such as XPS or infrared spectroscopy.

Activités

*fabrication of nanocrystal thin films
* optical measurements for the characterization of thin film (microscopy, ellipsometry)
* electromagnetic design of device using soft-ware such as comsol
*clean room fabrication using both optical and e beam lithography
*Optoelectronic characterization of infrared sensor (I-V, photocurrent spectrum, time response, noise, cryogenic measurements)
*punctual measurements on synchrotron might also be involved
*Reporting of the results

Compétences

The candidate will have a strong background in semiconductor physics. Experience in one/several of the following areas is desirable: clean room manufacturing, measurement of electronic transport in cryogenic conditions, handling of colloidal nanocrystals. You don't have to be an expert on every subject, but be ready to learn on all aspect of the project.
It is essential to have published scientific paper to apply. The candidate must have a strong appetite for experimental work (development of new instruments and measurement of characterization). The project is also very multidisciplinary with chemistry, physics of µ-fabrication and instrumentation. The candidate will have to work in an international team and therefore fluency in English is required.

Contexte de travail

This project is part of the ERC AQDtive and ANR camIR (funded for 3 years) from the host team projects which focus on the study of infrared nanocrystals and their integration into devices The work will be carried out at the “Institut des Nanosciences de Paris” (INSP) in the team of Emmanuel Lhuillier. The work will be done in collaboration with the chemical engineer of the laboratory, the cleanroom engineers of the INSP and also the other students of the team. Therefore, applicant needs to be ready to collaborate with all these teams located in the greater Paris area.


Publications from the group on the topic
1. The Rise of HgTe Nanocrystals for Infrared Optoelectronics, K. A. Sergeeva, Huichen Zhang, A. S. Portniagin, E. Bossavit, G. Mu, S. V. Kershaw, S. Ithurria, P. Guyot Sionnest, S. Keuleyan, C. Delerue, X. Tang, Andrey L. Rogach, E. Lhuillier, Adv Func Mater 34, 2405307 (2024).
2. Multiresonant Grating to replace Transparent Conductive Oxide Electrode for bias selected filtering of infrared photoresponse, Tung H. Dang, M. Cavallo, A. Khalili, C. Dabard, E. Bossavit, H. Zhang, N. Ledos, Y. Prado, X. Lafosse, C. Abadie, S. Ithurria, G. Vincent, Y. Todorov, C. Sirtori, A. Vasanelli, E. Lhuillier, Nano Lett 23, 8539 (2023)
3. Electric Field Distribution within a Van der Waals Heterostructure, D. Mastrippolito, M. Cavallo, E. Bossavit, C. Gureghian, A. Colle, T. Gemo, G. Strobbia, D. De Pesseroey, M. Paye, A. Khalili, H. Zhang, J. Biscaras, J. K. Utterback, P. Dudin, J. Avila, E. Lhuillier, D. Pierucci, Nano Lett 25, (2025).

Contraintes et risques

handling n nanoparticles, X-ray and laser