Missions

The tasks relating to this work consist in carrying out characterisations and dispersive electrical modelling of transistors.
The electrical characterisation of the transistors is essentially based on the study of parasitic low-frequency phenomena such as traps and thermal effects, as well as the characterisation and RF modelling of the component.
The development of an integrable analytical physical model based on the ASM model, modified by the realistic inclusion of certain physical effects (thermal and traps) to improve the validity and accuracy of the models.
This model is halfway between the purely physical model and a model based on an equivalent electrical circuit. Its advantage is that it can take into account more precise physical phenomena (field plate, traps, effects of saturation speed, effects of access resistors, effect of lowering the barrier induced by the drain (DIBL), modulation of channel length, temperature dependence, etc.), while allowing simulation times that are not prohibitive.

Activities

-Physics based modeling of GaN HEMTs
-Thermal and trap measurements of GaN HEMTs
-Electrical modeling with ASM-HEMT model or equivalent

Skills

-skills in semiconductor physics and charge transport
-skills in multiphysics modelling such as finite element modelling
-knowledge of Finite Element tools ANSYS and COMSOL
-knowledge of lwide band gap materials such as GaN and SiC
-skills in electrical characterization of components

Work Context

The work will be carried out as part of the DGA/CNRS GREAT research project, which involves developing component models for future GaN technology.

The position is located in a sector under the protection of scientific and technical potential (PPST), and therefore requires, in accordance with the regulations, that your arrival is authorized by the competent authority of the MESR.

Constraints and risks

no object

Additional Information

Le poste est situé à XLIM site de Brive la Gaillarde.