Missions

One of the major problems of GaN HEMT transistors is the high density of interface defects between the gate oxide (high-k) and the channel. In addition, the quality of the Schottky contacts at the gate level represents a major issue, because beyond affecting the performance, their degradation impacts the operation of the transistor. In this context, the candidate will focus on the elaboration and characterization of the different dielectrics, including AlN, on the GaN material. In a second step, the candidate will participate in the fabrication and electrical characterization of MOS capacitor test structures (MOSCAP) at the PTA.

Activités

-Deposition of high-k oxide on GaN substrate including AlN and physicochemical analysis of the quality of the high-k/GaN interface by X-ray Photoelectrons Spectrocopy (XPS), TEM, Raman and ellipsometry
-Fabrication of MOS capacitor test structures (MOSCAP)
-Analysis of the results

Compétences

1/ theoretical knowledge
- Physics of components
- Written and spoken English

2/ operational know-how :
- clean room work: mastery of safety rules
-Micro- and nano-fabrication
-Physico-chemical characterization

3/ Personal skills :
- Relational skills (team work)
- Ability to follow instructions (work in a CEA environment with the need to apply CEA and CNRS regulations)

Contexte de travail

The LTM is a joint CNRS/University of Grenoble Alpes research unit, comprising 6 teams, 4 of which are research teams, and has a staff of about 90. The laboratory is located on the CEA-LETI site in Grenoble.
The person recruited will work in the "Nanomaterials & Integration" team, and will work in collaboration with the other members of this team.

Contraintes et risques

no risks