Offre de thèse (PhD position): New GaN power device able of withstanding voltages above 1200V (M/F)
New
- FTC PhD student / Offer for thesis
- 36 mounth
- BAC+5
This offer is available in English version
This offer is open to people with a document recognizing their status as a disabled worker.
Offer at a glance
The Unit
Laboratoire d'analyse et d'architecture des systèmes
Contract Type
FTC PhD student / Offer for thesis
Working hHours
Full Time
Workplace
31031 TOULOUSE
Contract Duration
36 mounth
Date of Hire
01/09/2026
Remuneration
2300 € gross monthly
Apply Application Deadline : 16 June 2026 23:59
Job Description
Thesis Subject
Nitride materials (III-N), of which GaN is a member, are now the second most widely used family of semiconductors after silicon. These wide-bandgap semiconductors are now found in various types of devices for lighting and displays (LEDs), data storage (laser diodes), microwave applications (HEMT RF transistors), and new devices (transistors, diodes) are being developed to convert electrical energy. To reduce the manufacturing costs of these devices, it is essential to be able to integrate these materials into 'silicon' microelectronics processes in order to benefit from their advantages, particularly the availability of manufacturing tools capable of processing large-scale substrates. However, the synthesis of GaN material via heteroepitaxy on silicon substrates faces numerous challenges that severely limit the design freedom in stacking materials to create components and, consequently, the quality of the materials and the performance of the devices. In this context, our aim is to design, fabricate and characterize normally-off GaN HEMT transistors operating at voltages above 1200 V. The successful candidate will be responsible for developing this innovative device, drawing on the expertise and know-how available at the LN2 and LAAS laboratories. He or she must be highly motivated by experimental research and have a solid grounding in device and semiconductor physics. He or she must be self-reliant, have a flair for experimentation and be a team player.
Your Work Environment
This PhD is a joint supervision programme between the University of Toulouse (France), under the supervision of Prof. Frédéric Morancho, and the University of Sherbrooke (Canada), under the supervision of Prof. Hassan Maher. The research work planned as part of this PhD will take place at the CNRS, LAAS and LN2 laboratories. The candidate will be required to work on a rotating basis at both sites. Travel costs between the two laboratories will be covered by the project.
Compensation and benefits
Compensation
2300 € gross monthly
Annual leave and RTT
44 jours
Remote Working practice and compensation
Pratique et indemnisation du TT
Transport
Prise en charge à 75% du coût et forfait mobilité durable jusqu’à 300€
About the offer
| Offer reference | UPR8001-FREMOR-020 |
|---|---|
| CN Section(s) / Research Area | Micro and nanotechnologies, micro and nanosystems, photonics, electronics, electromagnetism, electrical energy |
About the CNRS
The CNRS is a major player in fundamental research on a global scale. The CNRS is the only French organization active in all scientific fields. Its unique position as a multi-specialist allows it to bring together different disciplines to address the most important challenges of the contemporary world, in connection with the actors of change.
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