Description du sujet de thèse

Nitride materials (III-N), which include GaN, are now the second most widely used family of semiconductors after silicon. These wide bandgap semiconductors are now used in various types of devices for lighting and displays (LEDs), data storage (laser diodes), microwave applications (RF HEMT transistors), and new devices (transistors, diodes) are being developed to convert electrical energy. To reduce the manufacturing costs of these devices, it is essential to be able to integrate these materials into silicon microelectronics processes in order to benefit from their advantages, particularly the availability of manufacturing tools capable of processing large substrates. However, the synthesis of GaN material by heteroepitaxy on silicon substrates faces many difficulties that severely limit the degrees of freedom in the design of material stacks for component fabrication and, consequently, the quality of the materials and the performance of the devices.
In this context, our goal is to design, manufacture, and characterize normally-off GaN HEMT transistors operating at voltages above 1200 V. The recruited candidate will be responsible for developing this innovative device, drawing on the expertise and know-how available at the LN2 and LAAS laboratories. He/she must be highly motivated by experimental research and have a good grounding in component and semiconductor physics. He/she must be autonomous, have a flair for experimentation and be a good team player.

Contexte de travail

This thesis is a joint supervision program between the University of Toulouse (France) under the supervision of Prof. Frédéric Morancho and the University of Sherbrooke (Canada) under the supervision of Prof. Hassan Maher. The research work planned as part of this thesis will take place at the CNRS, LAAS, and LN2 laboratories. The candidate will be required to work alternately at both sites. Travel expenses between the two laboratories will be covered by the project.

Le poste se situe dans un secteur relevant de la protection du potentiel scientifique et technique (PPST), et nécessite donc, conformément à la réglementation, que votre arrivée soit autorisée par l'autorité compétente du MESR.