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Reference : UMR8520-FRELEF-052
Workplace : VILLENEUVE D ASCQ
Date of publication : Thursday, March 26, 2020
Scientific Responsible name : Farid MEDJDOUB
Type of Contract : PhD Student contract / Thesis offer
Contract Period : 36 months
Start date of the thesis : 1 September 2020
Proportion of work : Full time
Remuneration : 2 135,00 € gross monthly
Description of the thesis topic
The overall objective of this proposal is to develop novel robust and reliable AlN-based power devices for high and medium power electronic systems targeting energy conversion efficiency applications and bringing the ultra-wide band gap (UWBG) semiconductors power devices another step towards the wide usability in the energy saving environment exploiting the full potential of this semiconductor material. In turn, the aim will be to explore and develop radically new material systems based on AlN ultra-wide bandgaps for future power devices providing higher robustness and superior temperature operation.
High crystalline AlN bulk material quality will be commercially purchased. Epilayers MBE growth will be performed by the partner CRHEA (Nice, France). Device design, fabrication and characterization will be carried out at CNRS-IEMN with the support of the University of Padova (Italy) in terms of advanced characterization.
Originality and Innovation
This program will push the boundaries of WBG technology by studying the implementation of AlN- based technology, which compared to GaN (and any other WBG semiconductor) has even better material properties. The ultimate goal of this proposal is to reach a breakthrough in the development of high voltage AlN transistors for application in power electronics
Wide Bandgap Semiconductors (WBG) such as SiC and GaN show superior material properties compared to Silicon. Due to these unique characteristics (high maximum current, high breakdown voltage, and high switching frequency), these WBG represent a tremendous opportunity to help solving the energy problems of the future. In this frame, the even wider bandgap but less mature material such as Aluminum Nitride (AlN, referred as Ultra-wide bandgap: UWBG) is also promising. AlN-based material system has a unique advantage due to its prominent spontaneous and piezoelectric polarization effects and flexibility in inserting appropriate heterojunctions thus dramatically broadening the device design space. Systems employing AlN-based devices could provide higher power efficiency, corresponding to lower losses, higher temperatures and higher switching frequencies, that allow reducing the size and weight of the converters.
1. F. Medjdoub et al, Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate, IEEE Electron Device Lett., 31 (2), pp. 111-113, 2010
2. N. Herbecq et al, Above 2000 V breakdown voltage at 600 K GaN-on-Silicon high electron mobility transistors, Phys. Status Solidi A, Vol. 213, 4, pp. 873–877, 2016
3. I. Abid et al, High lateral breakdown voltage in thin channel AlGaN/GaN high electron mobility transistors on AlN/sapphire templates, Micromachines, 10, 690, 2019
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