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H/F PhD of design and fabrication of RF GaN power devices on hybride SiC substrates for millimeter-wave applications

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Français - Anglais

Date Limite Candidature : lundi 17 mai 2021

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General information

Reference : UMR8520-FARMED-003
Workplace : VILLENEUVE D ASCQ
Date of publication : Monday, April 26, 2021
Scientific Responsible name : Farid Medjdoub
Type of Contract : PhD Student contract / Thesis offer
Contract Period : 36 months
Start date of the thesis : 1 October 2021
Proportion of work : Full time
Remuneration : 2 135,00 € gross monthly

Description of the thesis topic

GaN semiconductor is of strategic interest for future applications requiring high power / high efficiency such as 5G telecommunications or radars for active antenna. In this frame, the project GREAT aims to significantly support the optimization of this technology covering millimeter-waves up to W-band, which would pave the way for new unprecedented functionalities.
High resistive SiC substrates are currently the most suitable for the growth of RF power GaN HEMTs due to the low lattice mismatch and thermal expansion coefficient. However, the worldwide availability is rather low, especially in Europe and the cost is thus high. The company SOITEC is developing a new generation of SiC substrates based on their smart-cut approach consisting in high resistive thin SiC transferred on low cost conductive SiC material. In close collaboration with this company, the aim of the PhD will be the assessment and optimization of this approach, which would allow generating a low cost substrate with high performance and to a certain extent enabling EU to be independent in terms of material supply. Extensive fabrication and characterization of advanced RF GaN devices will be carried out.
As funding source has been granted by the French Ministry of Defense, the candidate should have an EU nationality.

Work Context

The main research focus are in six major scientific areas :
Materials and Nanostructures Physics,
Microtechnologies - Microsystems,
Micro and optoelectronics,
Communication circuits and systems,
Acoustics,
Instrumentation.
With 200 permanent researchers and 100 doctoral students for a total staff of more than 500, IEMN focuses on the following research area : physics of matter, nanostructures, microsystems and microtechnologies, microwave components and microelectronic circuits, RF and microwave circuits, digital communications, optoelectronics and photonic circuits, acoustic and ultrasonic sensors, microwave instrumentation.

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