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Reference : IRL2958-NADWER-032
Workplace : METZ
Date of publication : Friday, April 30, 2021
Scientific Responsible name : ABDALLAH OUGAZZADEN and JEAN PAUL SALVESTRINI
Type of Contract : PhD Student contract / Thesis offer
Contract Period : 36 months
Start date of the thesis : 1 September 2021
Proportion of work : Full time
Remuneration : 2 135,00 € gross monthly
Description of the thesis topic
In the frame of this project we propose to explore a novel deep UV emitter (280nm-250nm) device concept based on band gap engineering of hBN/BAlN/AlGaN heterostructures and doping engineering to potentially enhance the efficiency and overcome the intrinsic problem of low p-type conductivity and electron overflow from the QWs. Epitaxial growth and thermal activation of p-type hBN on n-Al-rich AlGaN will be studied. Metal deposition and thermal annealing of p-contacts will be investigated and optimized. Diode structures consisting of p-type hBN on BAlN electron blocking layer on n-type Al-rich Al Ga N will be fabricated and characterized. In addition, epitaxial growth of the structure on hBN/AlN substrate will be studied and compared with the structure grown directly on AlN substrate. This could ultimately pave the way toward the realization of high efficiency nitride deep UV optoelectronic devices.
The PhD student will first start to work on the different technological bricks of the epitaxial growth and micro-fabrication of the structure at the IRL GT CNRS. With the progress of the project, he/she will work on the process fabrication as well as the lift off and transfer step at the Institut Lafayette a technological platform located next to Georgia Tech Lorraine in Metz.
Constraints and risks
For more information, you can consult the laboratory website
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