PhD student in Deep characterization of 2D h-BN layers and its subsequent GaN based heterostructures epitaxied on Sapphire substrates for device fabrication optimization using artificial intelligence. (M/F)

New

GEORGIATECH-CNRS

METZ • Moselle

  • FTC PhD student / Offer for thesis
  • 36 month
  • Doctorate

This offer is available in English version

This offer is open to people with a document recognizing their status as a disabled worker.

Offer at a glance

The Unit

GEORGIATECH-CNRS

Contract Type

FTC PhD student / Offer for thesis

Working hHours

Full Time

Workplace

57070 METZ

Contract Duration

36 month

Date of Hire

01/10/2026

Remuneration

2300 € gross monthly

Apply Application Deadline : 24 June 2026 23:59

Job Description

Thesis Subject

This doctoral thesis will be conducted as part of the REBORN project within the PEPR DIADEM program, funded by the French National Research Agency.
Hexagonal boron nitride is a new two-dimensional optoelectronic material that is beginning to play an important role in prototypes of next-generation optoelectronic and electronic devices. Since it is produced in a MOVPE system during the same epitaxial cycle as GaN-based active devices, h-BN is on the verge of large-scale commercialization. Given the complexity of the MOVPE epitaxial environment, it is necessary to deepen our understanding of the complex task of improving the epitaxial quality of h-BN materials. This project aims to significantly improve the quality of hexagonal boron nitride-based optoelectronic materials through advanced characterization and AI-guided optimization of epitaxial growth parameters. The PhD student will be responsible for the advanced characterization of materials (XRD, AFM, SEM, PL, CL, and electrical measurements) as well as the analysis of other characterization techniques conducted at the Soleil and ESRF synchrotrons.
All results will be analyzed to identify key factors that can be used to train artificial intelligence models to guide the optimization of epitaxy. The PhD student will also be responsible for fabricating a number of components (LEDs, HEMT transistors, etc.) to validate the various approaches selected. These components will be fabricated at the Lafayette Institute, a micro-nano fabrication platform.

Your Work Environment

This research will be carried out in the context of IRL 2958 GT-CNRS, a joint international laboratory between the Georgia Institute of Technology and CNRS. Like any research project, this project is a collaboration with a set of national partners (CEA, Georgia Tech, Soleil) from different fields and will therefore require a certain amount of collaborative work and communication.

Constraints and risks

Work in a bilingual environment, meticulous work in clean room. The position is in a sector subject to scientific and technical potential protection (PPST) regulations and therefore, in accordance with these regulations, requires your arrival to be authorized by the competent authority of the MESR.

Compensation and benefits

Compensation

2300 € gross monthly

Annual leave and RTT

44 jours

Remote Working practice and compensation

Pratique et indemnisation du TT

Transport

Prise en charge à 75% du coût et forfait mobilité durable jusqu’à 300€

About the offer

Offer reference IRL2958-CRICOR-043

About the CNRS

The CNRS is a major player in fundamental research on a global scale. The CNRS is the only French organization active in all scientific fields. Its unique position as a multi-specialist allows it to bring together different disciplines to address the most important challenges of the contemporary world, in connection with the actors of change.

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PhD student in Deep characterization of 2D h-BN layers and its subsequent GaN based heterostructures epitaxied on Sapphire substrates for device fabrication optimization using artificial intelligence. (M/F)

FTC PhD student / Offer for thesis • 36 month • Doctorate • METZ

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