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PhD High quality Al rich AlGaN growth on layered BN for Chip scale UV Emitters (M/F)

This offer is available in the following languages:
- Français-- Anglais

Date Limite Candidature : dimanche 24 mars 2024

Assurez-vous que votre profil candidat soit correctement renseigné avant de postuler

Informations générales

Intitulé de l'offre : PhD High quality Al rich AlGaN growth on layered BN for Chip scale UV Emitters (M/F) (H/F)
Référence : IRL2958-CRICOR-010
Nombre de Postes : 1
Lieu de travail : METZ
Date de publication : samedi 10 février 2024
Type de contrat : CDD Doctorant/Contrat doctoral
Durée du contrat : 36 mois
Date de début de la thèse : 1 septembre 2024
Quotité de travail : Temps complet
Rémunération : 2 135,00 € gross monthly
Section(s) CN : Micro and nanotechnologies, micro and nanosystems, photonics, electronics, electromagnetism, electrical energy

Description du sujet de thèse

The project aims at the mechanical release of III-nitride devices using h-BN is a promising approach for heterogeneous integration. Chip-scale technologies such as UV light-emitting diodes (LEDs) and cathodoluminescent (CL) chips are emerging and require considerable development to compete with conventional UV light sources such as mercury lamps and excimer lamps. Both technologies can benefit from the development of BN and the growth of high quality Al-rich AlGaN on BN. In this project, we aim to use 2D h-BN as an efficient buffer and sacrificial layer to grow high quality AlGaN for LED and LC chip development.

Contexte de travail

The PhD student will work on the various technological building blocks of MOVPE epitaxial growth of UV LED structures and will also carry out material characterisation (XRD, AFM, SEM, PL, CL and electrical measurements).students must have a master's degree in engineering, physics or materials science.

Le poste se situe dans un secteur relevant de la protection du potentiel scientifique et technique (PPST), et nécessite donc, conformément à la réglementation, que votre arrivée soit autorisée par l'autorité compétente du MESR.

Contraintes et risques

The position is located in an area covered by the protection of scientific and technical potential (PPST), and therefore requires, in accordance with regulations, that your arrival be authorized by the competent MESR authority.

Informations complémentaires

Selected candidates will have the opportunity to enroll as Georgia Tech doctoral students and may apply through the Georgia Tech Atlanta School of Electrical and Computer Engineering Graduate Program. Further information will be provided at the student's request. Applicants should submit references and a short cover letter to the address below. Dr. Suresh Sundaram Faculty, Georgia Tech Europe GT European Campus Email: suresh.sundaram@ece.gatech.edu