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Portail > Offres > Offre UPR8001-FILCRI-008 - H/F - Etude des propriétés de transports dans les matériaux pour l'électronique

Study of transport properties in electronic materials

This offer is available in the following languages:
Français - Anglais

Date Limite Candidature : jeudi 14 juillet 2022

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General information

Reference : UPR8001-FILCRI-008
Workplace : TOULOUSE
Date of publication : Thursday, June 23, 2022
Type of Contract : FTC Scientist
Contract Period : 13 months
Expected date of employment : 1 August 2022
Proportion of work : Full time
Remuneration : Between 2663 € and 3783 € gross monthly salary, depending on previous experience
Desired level of education : PhD
Experience required : 1 to 4 years


The post-doctoral fellow will be in charge of all the team's activities concerning the characterisation of transport properties in electronics materials. Several activities in this field are carried out in the framework of national and European research projects, or other scientific collaborations. These activities cover several types of materials, ranging from Cu and/or Ru thin layers for metal interconnects, to materials for source/drain junction engineering (group IV semiconductors [Si, SiGe] and Si hyperdoping by group VI impurities), to topological insulators for quantum computing. The fabrication processes studied include ion implantation, molecular beam epitaxy and nanosecond laser annealing.
The post-doc will also actively participate in the supervision of the various students working on these research topics. Finally, he will interact with the engineers of the LAAS characterization platform in order to implement new solutions for the improvement of the Hall effect measurement system currently available in the laboratory.


- Measurement of the resistance of thin metal layers as a function of melt or sub-melt annealing conditions, in “full wafer” configuration or on patterned nanostructures
- Conventional and differential Hall effect measurements of Si layers implanted with group VI impurities (identification of the contribution of defects to the measured "net doping")
- Development of a Hall effect measurement procedure to identify the surface states of "topological insulator" materials developed in our team
- Study of the electrical activation of dopants and of the carriers mobility in SiGe thin films with variable Ge concentration submitted to a nanosecond laser annealing step in the melt regime.
- Supervision of students (undergraduates and PhD students)
- Identification of complementary experimental techniques to be implemented at LAAS or within new scientific collaborations (4PP, TLM, DLTS, ECV, SCM, SSRM…)


- PhD in physics, materials science or nanotechnology
- Solid skills in electrical nano-characterization methods
- Ability to fluently write and speak in English due to the frequently planned international meetings and written reporting activities as well as continuous mail and telephone exchanges within the different projects in progress
- Good team-working capacity (several interactions to be foreseen with the different partners of the ongoing projects as well as with the technical staff of the laboratory)

Work Context

With a large number of permanent researchers, engineers and PhD students as well as strong interactions with industry, the LAAS-CNRS stands at the crossing between scientific research, innovation and applications. The LAAS-CNRS possesses one of the most important technological installations dedicated to research in France, with an ultra-modern cleanroom of 1600m² as well as a characterization platform (1200 m2) hosting numerous equipment for the electrical, optical, HF and chemical/bio characterization of micro and nano-systems.
The work will take place mainly in the host laboratory in Toulouse, but the post-doc researcher will work in a very stimulating research environment in the framework of numerous academic and industrial collaborations at French and European level.

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