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Portail > Offres > Offre UPR8001-FILCRI-007 - Etude par effet Hall conventionnel et différentiel des propriétés électriques de matériaux et nanostructures obtenus par des procédés de fabrication à faible bilan thermique pour les nanodispositifs électroniques avancés - H/F

Investigation of electrical properties by conventional and Differential Hall Effect techniques of thin semiconductor and metallic layers processed at low thermal budget for nanoscaled electron devices

This offer is available in the following languages:
Français - Anglais

Date Limite Candidature : lundi 23 mai 2022

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General information

Reference : UPR8001-FILCRI-007
Workplace : TOULOUSE
Date of publication : Monday, May 2, 2022
Type of Contract : FTC Scientist
Contract Period : 15 months
Expected date of employment : 1 June 2022
Proportion of work : Full time
Remuneration : Between 3000 € and 3700 € gross monthly salary, depending on previous experience
Desired level of education : PhD
Experience required : 1 to 4 years


The post-doctoral fellow will be in charge of the advanced characterization of the electrical properties of the different structures studied in the framework of the IT2-FR project (IC Technology for the 2nm node), carried out in collaboration with several French industrial partners operating in the field of micro/nano electronics.
The objective of this project is to explore, develop and demonstrate technology options that will enable the realization of 2 nm CMOS technology. At LAAS, particular attention will be paid to the study of the effects of nanosecond laser annealing on different types of materials with a view to integrating this annealing technique into the manufacturing processes of advanced electronic components. The two main studies will concern (i) the engineering of Cu and/or Ru-based metal interconnects (measurement of the layer resistance as a function of the melt or sub-melt annealing conditions, in "full wafer" configuration or on patterned nanostructures) and (ii) the engineering of source/drain junctions (dopant activation and carrier mobility in SiGe thin films following a nanosecond laser annealing step in the melt regime; hyperdoping by implantation of group VI impurities, impact of the various phenomena that take place during the resolidification of liquid layers on the electrical properties, etc.)
The post-doc researcher will also collaborate with the other researchers of the LAAS team in the framework of various national and European projects currently in progress.


- Measurement of the resistance of thin metal layers as a function of melt or sub-melt annealing conditions, in “full wafer” configuration or on patterned nanostructures
- Conventional and differential Hall effect measurements of Si layers implanted with group VI impurities (identification of the contribution of defects to the measured "net doping")
- Conventional Hall effect measurements of thin SiGe layers with a non-uniform Ge depth distribution: improvement of the existing models for the physical interpretation of such measurements, especially by taking into account the compositional Ge depth variation in the estimation of the activation rate and/or the defects induced degradation of the carrier mobility.
- Development of a reliable etching procedure for the removal of ultra-thin SiGe layers with a nanometric resolution
- Application of the Differential Hall effect method to the investigation of thin SiGe layers with a non-uniform Ge depth distribution
- Identification of complementary experimental techniques to be implemented at LAAS or within the IT2-FR consortium (4PP, TLM, DLTS, ECV, SCM, SSRM…)


- PhD in physics, materials science or nanotechnology
- Solid skills in electrical nano-characterization methods
- Ability to fluently write and speak in English due to the frequently planned international meetings and written reporting activities as well as continuous mail and telephone exchanges within the different projects in progress
- Good team-working capacity (several interactions to occur with both the project partners as well as the engineers/technical staff working in the local laboratory)

Work Context

With a large number of permanent researchers, engineers and PhD students as well as strong interactions with industry, the LAAS-CNRS stands at the crossing between scientific research, innovation and applications. The LAAS-CNRS possesses one of the most important technological installations dedicated to research in France, with an ultra-modern cleanroom of 1600m² as well as a characterization platform (1200 m2) hosting numerous equipment for the electrical, optical, HF and chemical/bio characterization of micro and nano-systems.
The project will take place mainly in the host laboratory in Toulouse, but the post-doc researcher will work in a very stimulating research environment in the framework of numerous academic and industrial collaborations at French and European level.

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