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Reference : UPR8001-FILCRI-005
Workplace : TOULOUSE
Date of publication : Monday, December 28, 2020
Type of Contract : FTC Scientist
Contract Period : 15 months
Expected date of employment : 15 February 2021
Proportion of work : Full time
Remuneration : between 2648 et 3054 € gross salary per month, depending on previous experience
Desired level of education : PhD
Experience required : Indifferent
The Post-doc researcher will be in charge of the electrical characterization of dopant activation and carrier mobility of the different test structures that will be fabricated within the European project MUNDFAB. This research activity will contribute to the overall objective of the EU project, that is to improve the existing physical models (or develop new ones where necessary) for the predictive simulation of advanced fabrication processes of nanoscaled electron devices. A special attention will be devoted to the investigation of dopant activation and carrier mobility on thin SiGe layers submitted to a nanosecond laser anneal in melt regime. The impact of the different phenomena occurring during the resolidification of the melted layer will be investigated in detail, including Ge redistribution, strain relaxation and defect formation. Additional low-thermal budget processes will be investigated including the in situ doping of SiGe layers during low temperature CVD growth or the improved ion implantation doping obtained by heating the Si or SiGe substrates at temperatures below 500°C during the implant
- Conventional Hall effect measurements of thin SiGe layers with a non-uniform Ge depth distribution: improvement of the existing models for the physical interpretation of such measurements, especially by taking into account the compositional Ge depth variation in the estimation of the activation rate and/or the defects induced degradation of the carrier mobility.
- Development of a reliable etching procedure for the removal of ultra-thin SiGe layers with a nanometric resolution
- Application of the Differential Hall effect method to the investigation of thin SiGe layers with a non-uniform Ge depth distribution
- Identification of complementary experimental techniques to be implemented at LAAS or within the European consortium (4PP, TLM, DLTS, ECV, SCM, SSRM…)
- PhD in physics, materials science or nanotechnology
- Solid skills in electrical nano-characterization methods
- Ability to fluently write and speak in English due to the frequently planned international meetings and written reporting activities as well as continuous mail and telephone exchanges within the EU project consortium
- Good team-working capacity (several interaction to occur with both the EU consortium members as well as the engineers/technical staff working in the local laboratory)
With a large number of permanent researchers, engineers and PhD students as well as strong interactions with industry, the LAAS-CNRS stands at the crossing between scientific research, innovation and applications. The LAAS-CNRS possesses one of the most important technological installations dedicated to research in France, with an ultra-modern cleanroom of 1600m² as well as a characterization platform (1200 m2) hosting numerous equipment for the electrical, optical, HF and chemical/bio characterization of micro and nano-systems. The project will be mainly carried out in the host laboratory in Toulouse, but the post-doc researcher will work in a very stimulating context of international research within the framework of a European project.
Please provide a CV, a list of publications, a statement of research interest towards the proposed position as well as the name and address of 2-3 referees
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