General information
Offer title : Postdoctoral Researcher (M/F) - Synthesis and validation of properties of AlGaN material for photonics (H/F)
Reference : UMR9001-NOELEB-004
Number of position : 1
Workplace : PALAISEAU
Date of publication : 01 October 2025
Type of Contract : Researcher in FTC
Contract Period : 24 months
Expected date of employment : 1 January 2026
Proportion of work : Full Time
Remuneration : 3081,33 - 4291,70 euros, Gross monthly salary depending on experience
Desired level of education : Doctorate
Experience required : 1 to 4 years
Section(s) CN : 08 - Micro and nanotechnologies, micro and nanosystems, photonics, electronics, electromagnetism, electrical energy
Missions
Optimization of growth and validation of material properties through the manufacture of optoelectronic devices
Activities
III-N are particularly interesting for applications in photonics. However, one of the main challenges is related to the quality of the material. This is particularly true for AlGaN.
In this context, the objective of the research project is to grow AlGaN using molecular beam epitaxy and to validate its properties. This growth technique, used in research laboratories, offers the advantage of highly precise control over growth parameters and the purity of the synthesized materials.
To achieve this goal, the work is divided into two main objectives.
- Optimization of AlGaN growth protocols to eliminate defects and enhance its properties.
- Validation of the material's properties through the manufacture of photonic devices that will enable the improvement in the quality of the synthesized material to be assessed over time and the optimized growth conditions to be validated.
Dans ce contexte, l'objectif du projet de recherche est de croitre l'AlGaN par épitaxie par jets moléculaires et de valider ses propriétés. Cette technique de croissance utilisée dans les laboratoires de recherche offre l'avantage de contrôler avec une grande précision les paramètres de croissance ainsi que la pureté des matériaux synthétisés.
Pour se faire, le travail se décompose en deux grands objectifs.
- Optimisation des protocoles de croissance de l'AlGaN pour éliminer les défauts et augmenter ses propriétés.
- Validation des propriétés du matériau via la fabrication de dispositifs photonique permettant de juger dans le temps l'amélioration de la qualité du matériau synthétisé et validera les conditions de croissance optimisées.
Skills
- Experience in epitaxy of semiconductor materials, ideally Nitride materials.
- Experience in structural and photonic characterization of semiconductor materials.
- Experience in clean-room micro-fabrication.
- Good communication skills in English
- Experience in writing scientific documents (publications, reports).
Work Context
Work will be carried out at the Centre de Nanosciences et de Nanotechnologies located on the Saclay plateau. The candidate will be integrated into the Materials Department and will work in close collaboration with teams from the Photonics Department. C2N is equipped with a large clean room for micro-nano-fabrication and two platforms dedicated to epitaxial growth and materials characterization. C2N has long expertise in the growth and characterization of III-N by molecular jet epitaxy, as well as in the nano-fabrication and testing of devices.
The position is located in a sector under the protection of scientific and technical potential (PPST), and therefore requires, in accordance with the regulations, that your arrival is authorized by the competent authority of the MESR.
Constraints and risks
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