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Portail > Offres > Offre UMR9001-NOELEB-003 - Post-doctorat H/F- Ingénierie de dimension et de contrainte des inclusions InGaN dans les nanofils de GaN

Dimensional and stress engineering for InGaN inclusions in GaN nanowires for photonic applications - Post-doctorat M/F

This offer is available in the following languages:
- Français-- Anglais

Date Limite Candidature : mardi 22 juillet 2025 23:59:00 heure de Paris

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Informations générales

Intitulé de l'offre : Dimensional and stress engineering for InGaN inclusions in GaN nanowires for photonic applications - Post-doctorat M/F (H/F)
Référence : UMR9001-NOELEB-003
Nombre de Postes : 1
Lieu de travail : PALAISEAU
Date de publication : mardi 1 juillet 2025
Type de contrat : Chercheur en contrat CDD
Durée du contrat : 24 mois
Date d'embauche prévue : 1 octobre 2025
Quotité de travail : Complet
Rémunération : 3081,33 - 3519,85 euros, Gross monthly salary depending on experience
Niveau d'études souhaité : Doctorat
Expérience souhaitée : 1 à 4 années
Section(s) CN : 08 - Micro et nanotechnologies, micro et nanosystèmes, photonique, électronique, électromagnétisme, énergie électrique

Missions

Investigation of dimensional and stress engineering strategies for InGaN inclusions in GaN nanowires for photonic applications

Activités

III-N heterostructures are particularly interesting for applications in communication and photonics. In particular, they enable emission in the visible wavelength range. However, one of the main challenges in developing heterostructure-based technologies is their emission efficiency at room temperature. One interesting approach is to integrate epitaxial InGaN insertion into the GaN nanowire volume. Thanks to their high aspect ratio, the nanowires act as a waveguide, which tends to improve photon collection efficiency. The research aims to investigate the emission properties of InGaN insertion in GaN nanowires, for photonic applications. Efforts will focus on the epitaxial growth of nanowires incorporating InGaN insertions, the development of post-growth processes for tuning the emission wavelength, and basic structural and photonic characterizations. The influence of various experimental parameters (InGaN inclusion size, internal stress) on the photonic characteristics of the systems will be investigated.

Compétences

- Experience in epitaxy of semiconductor materials, ideally Nitride materials.
- Experience in structural and photonic characterization of semiconductor materials.
- Experience in clean-room micro-fabrication.
- Good communication skills in English
- Experience in writing scientific documents (publications, reports).

Contexte de travail

Work will be carried out at the Centre de Nanosciences et de Nanotechnologies located on the Saclay plateau. The candidate will be integrated into the Materials Department and will work in close collaboration with teams from the Photonics Department. C2N is equipped with a large clean room for micro-nano-fabrication and two platforms dedicated to epitaxial growth and materials characterization. C2N has long expertise in the growth and characterization of III-N nanowires by molecular jet epitaxy, as well as in the nano-fabrication and testing of nanowire-based devices.

Le poste se situe dans un secteur relevant de la protection du potentiel scientifique et technique (PPST), et nécessite donc, conformément à la réglementation, que votre arrivée soit autorisée par l'autorité compétente du MESR.

Contraintes et risques

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Informations complémentaires

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