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Portal > Offres > Offre UMR9001-FEDPAN-003 - Chercheur post-doctoral (H/F), synthèse d’hétérostructures de phase cristalline par Molecular Beam Epitaxy (MBE)

Postdoctoral researcher (M/F), synthesis of crystal phase heterostructures by Molecular Beam Epitaxy

This offer is available in the following languages:
- Français-- Anglais

Application Deadline : 04 February 2026 23:59:00 Paris time

Ensure that your candidate profile is correct before applying.

General information

Offer title : Postdoctoral researcher (M/F), synthesis of crystal phase heterostructures by Molecular Beam Epitaxy (H/F)
Reference : UMR9001-FEDPAN-003
Number of position : 1
Workplace : PALAISEAU
Date of publication : 14 January 2026
Type of Contract : Researcher in FTC
Contract Period : 10 months
Expected date of employment : 1 March 2026
Proportion of work : Full Time
Remuneration : From €3,131.32 to €3,569.85 gross per month
Desired level of education : Doctorate
Experience required : 1 to 4 years
Section(s) CN : 09 - Condensed matter: electronic properties and structures

Missions

Develop and optimize the growth of GaAs nanowires integrating crystal-phase heterostructures by molecular beam epitaxy (MBE).

Contribute to scientific writing, presentation of results, and promotion of the project's outcomes.

Activities

Molecular beam epitaxy (MBE) growth of GaAs nanowires on patterned Si/SiO₂ substrates.

Structural analysis by electron microscopy (in situ TEM, electron diffraction, zone-axis indexing).

Automated processing and analysis of TEM images (segmentation, extraction of morphological parameters).

Modeling of growth and phase transitions (nucleation kinetics, diffusion mechanisms, droplet stability).

Optical characterization of nanostructures (photoluminescence, spectroscopy).

Scientific exchange with supervisors and collaborators, participation in project meetings.

Writing of reports, research articles, and scientific communication materia

Skills

Experience in molecular beam epitaxy (MBE) or in the growth of III–V semiconductor materials.

Proficiency in transmission electron microscopy (TEM) and electron diffraction analysis.

Knowledge in semiconductor physics (crystal structures, defect mechanisms, band alignment, and spontaneous polarization).

Work Context

Work carried out at the Centre for Nanoscience and Nanotechnology (C2N, Université Paris-Saclay / CNRS).

Access to a standard MBE growth platform, cleanroom facilities, TEM microscopes, and optical characterization equipment.

Close collaboration within a multidisciplinary research team (material growth, in situ electron microscopy, modeling, optics).

Regular interactions with project supervisors and academic partners.

A demanding research environment focused on publishable results and on the demonstration of unprecedented growth control.

The position is located in a sector under the protection of scientific and technical potential (PPST), and therefore requires, in accordance with the regulations, that your arrival is authorized by the competent authority of the MESR.

Constraints and risks

Work on MBE systems under ultra-high vacuum, including high-temperature effusion/evaporation sources.

Handling of chemicals for substrate preparation and cleaning (e.g., fluorinated solutions, acids).