Informations générales
Intitulé de l'offre : UTC photo-diode fabrication for THz generation M/F (H/F)
Référence : UMR8520-MOHZAK-013
Nombre de Postes : 1
Lieu de travail : VILLENEUVE D ASCQ
Date de publication : mercredi 10 septembre 2025
Type de contrat : IT en contrat CDD
Durée du contrat : 15 mois
Date d'embauche prévue : 1 novembre 2025
Quotité de travail : Complet
Rémunération : Gross salary of 3000 €
Niveau d'études souhaité : BAC+5
Expérience souhaitée : Indifférent
BAP : C - Sciences de l'Ingénieur et instrumentation scientifique
Emploi type : Experte electronicienne ou expert electronicien
Missions
The IT candidate's mission will involve fabricating semiconductor devices at the Institute's Micro Nano Fabrication Facility (CMNF). This includes the production of UTC photodiodes on InP substrates, aimed at developing high-power THz sources. The candidate will also be responsible for characterizing these UTC photodiodes in DC, RF, and photonic domains.
Activités
Based on an existing foundation, the main objective of the activity will be to finely optimize the technological steps of the UTC photodiode fabrication process on InP, and to continuously contribute to its development or to the creation of new processes. The work will involve exhaustive high-frequency characterization of these components.
Compétences
The candidate must hold a Master's degree (Bac+5) and possess knowledge of nanometric devices intended for microwave and THz applications. Experience in fabricating components on InP substrates would be highly appreciated.
They should have solid experience in cleanroom semiconductor device technology and have successfully carried out the various technological steps involved in device fabrication.
Required skills include:
Understanding of semiconductor physics and its applications
Basic knowledge of cleanroom characterization techniques
Familiarity with cleanroom fabrication processes
Optical and electron beam lithography
Wet etching
Dry etching (RIE, ICP, etc.)
Surface treatment
Metal and dielectric deposition
Expertise in high-frequency characterization is also required
Characterization of III-V microwave components
DC and high-frequency characterization from 0.5 to 110 GHz
Contexte de travail
The work will be carried out within the ANODE (Advanced Nanometric Device) team of the IEMN, which is specialised, among other things, in the frabication and characterisation of very high frequency components. THz applications is one of the group's specialities.
The activity will be mainly focused on clean room work but will also include measurements of devices made in IEMN's characterisation centre.
He/she will have specific training in the relative safety of the cleanroom and will be introduced to specific technological techniques for using the various resources available.
The IEMN is a Joint Research Unit involving the CNRS, the University of Lille, the Polytechnic University of Hauts-de-France, Centrale Lille and ISEN JUNIA. Its equipment for the design, manufacture and characterisation of devices is at the highest European level. The institute has about 230 permanent staff (professors, researchers, engineers and administrative personnel) and about 150 PhD students. The research carried out at the IEMN covers a vast field ranging from the physics of materials and nanostructures to telecommunications systems and acoustic and microwave instrumentation.
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Le poste se situe dans un secteur relevant de la protection du potentiel scientifique et technique (PPST), et nécessite donc, conformément à la réglementation, que votre arrivée soit autorisée par l'autorité compétente du MESR.
Contraintes et risques
Clean room.
Informations complémentaires
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