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Portail > Offres > Offre UMR8520-FRELEF-097 - Ingénieur en technologie des composants GaN H/F

Engineer in GaN devices technology H/F

This offer is available in the following languages:
Français - Anglais

Date Limite Candidature : vendredi 6 août 2021

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General information

Reference : UMR8520-FRELEF-097
Workplace : VILLENEUVE D ASCQ
Date of publication : Friday, July 16, 2021
Type of Contract : FTC Technical / Administrative
Contract Period : 12 months
Expected date of employment : 1 October 2021
Proportion of work : Full time
Remuneration : From 2109 euros gross monthly according to experience.
Desired level of education : 3-year university degree
Experience required : Indifferent

Missions

The engineer will be responsible for semiconductor devices fabrication in clean room. The candidate will have to work on the different steps of the technological process of the devices.
The devices concerned are in the GaN field and can be used for various microwave and THz applications. For example, the group PUISSANCE is working on the development of HEMTs (High Electron Mobility Transistors), SSDs (Self-Switching Diodes), etc ... The GaN material used for the fabrication of the devices stems from different sources: the CRHEA, the SOITEC BELGIUM company, the NTU laboratory in Singapore ...

Activities

The main objective is to fabricate devices in clean room using well-established processes and contribute to their continuous improvement. The candidate will have to use all the equipment available in clean room (electronic lithography, optical lithography, plasma etching, chemical etching, deposition, annealing). He/she will also have to carry out some simple electrical characterizations of the devices (resistance and transistors measurement, hall measurements) in order to evaluate the quality of the technological processes.

Skills

The candidate must have a master's degree or an engineering degree with knowledge of nanoscale components for microwave and THz applications. He/she must have knowledge of cleanroom component technology.
The expected skills are:
-Knowledge of technological process in cleanroom
-Knowledge in etching (RIE, ICP, ...) would be appreciated
-Knowledge of semiconductor physics and their applications
-Basic knowledge on characterization (in-line characterization): measurement of resistances, transistors...
-Autonomy and rigor in the execution of tasks
-Ability to adapt and work in a team
-Good organizational and communication skills

Work Context

The candidate will join the PUISSANCE group at IEMN which is specialized in GaN-based devices for microwave and THz power applications. This group has expertise in simulation, characterization and technological device fabrication. The activity is mainly towards work in clean room. The candidate will have specific training in cleanroom safety and will be introduced to specific technological techniques for using the various resources available.
The IEMN is a Joint Research Unit associating the CNRS, the University of Lille, the Polytechnic University Hauts-de-France, Centrale Lille and ISEN JUNIA. Its equipment for the design, manufacture and characterization of devices is at the best European level. The institute brings together around 230 permanent staff (professors, researchers, engineers and administrative staff) and around 150 doctoral students. Research at the IEMN involves a broad field ranging from the physics of materials and nanostructures to telecommunications systems and acoustic and microwave instrumentation.

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