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Portail > Offres > Offre UMR8520-FARMED-011 - Chercheur CDD : simulation et fabrication de composants de puissance verticaux innovants (H/F)

Postdoctoral position: simulation and fabrication of innovative vertical power components (M/F)

This offer is available in the following languages:
- Français-- Anglais

Date Limite Candidature : mardi 19 mars 2024

Assurez-vous que votre profil candidat soit correctement renseigné avant de postuler

Informations générales

Intitulé de l'offre : Postdoctoral position: simulation and fabrication of innovative vertical power components (M/F) (H/F)
Référence : UMR8520-FARMED-011
Nombre de Postes : 1
Lieu de travail : VILLENEUVE D ASCQ
Date de publication : mardi 6 février 2024
Type de contrat : CDD Scientifique
Durée du contrat : 12 mois
Date d'embauche prévue : 1 avril 2024
Quotité de travail : Temps complet
Rémunération : From 2934 € depending on experience
Niveau d'études souhaité : Niveau 8 - (Doctorat)
Expérience souhaitée : 1 à 4 années
Section(s) CN : Micro and nanotechnologies, micro and nanosystems, photonics, electronics, electromagnetism, electrical energy

Missions

The objective of this project is the study of vertical GaN power components produced on the so-called SmartGaN substrates for Power application currently being developed at SOITEC. The work program is structured as follows: Literature survey of vertical GaN transistors, design/simulation of diodes and transistors on SmartGaN substrate, clean room fabrication of devices on SmartGaN substrate and related electrical and thermal characterization.

Activités

• Literature survey
• TCAD (Silvaco) simulation of innovative vertical GaN devices
• Device fabrication in clean room (diodes and transistors)
• Electrical (DC, pulsed, high voltage, etc.), structural (SEM, AFM, profilometer, etc.) and thermal characterization of the fabricated devices

Compétences

We are looking for an enthusiastic person to work in a research clean room, who can take care of various technological steps such as lithography, deposition (metals, dielectrics), etching (RIE, ICP etc.), dynamic, autonomous, able to take initiatives, passionate.
With higher education, PhD in micro and nanotechnology, your skills allow you to analyze the complex issues of integrating several technological steps necessary to fabricate advanced power devices. You have a sense of organization and innovation. Knowledge in particular of TCAD simulation of III-V power electronic components is required. The candidate must be able to work both independently and in a collaborative environment.

Contexte de travail

The project will take place at the Institute of Electronics, Microelectronics and Nanotechnologies (IEMN) which is a major French player in the field of micro/nanotechnologies and their applications (https://www.iemn.fr/en/). The IEMN is part of the INSIS institute from CNRS (http://www.cnrs.fr/index.php) and the University of Lille (https://www.univ-lille.fr/). As part of the electronic devices for energy conversion activities at IEMN, our team (WIND group) has the mission to design and produce wide bandgap and ultra-large gap power devices. We aim to strengthen our team with a postdoctoral fellow in charge of simulation and part of the fabrication of vertical devices for power electronics.

Le poste se situe dans un secteur relevant de la protection du potentiel scientifique et technique (PPST), et nécessite donc, conformément à la réglementation, que votre arrivée soit autorisée par l'autorité compétente du MESR.