Missions

Spintronics allowed development of new industrial applications in magnetic recording such as sensors and magnetic random access memories (MRAM). For the latter, out-of-plane magnetized magnetic tunnel junctions are of particular interest. However, improving thermal stability and lowering power consumption of such devices remain two critical requirements to be addressed with new classes of materials. As part of a project with Advanced Storage Research Consortium (ASRC), the focus will be on studying and designing the improvement of key fundamental properties that ensure the above requirements, including through materials engineering by numerical simulations. This will help optimize next-generation ultrafast, ultrafast and ultrasmall spintronic devices.

Activités

Selected candidate will use multi-scale including ab initio and atomisitic modeling approaches to study the thermal stability mechanisms and magnetization manipulation characteristics of nanostructures with perpendicular magnetic anisotropy for non-volatile memory applications. This includes exploring the potential of new classes of materials such as two-dimensional and/or ferroelectric and multiferroic materials.

Compétences

- Solid knowledge in the fields of condensed matter and spintronics.
- Mastering calculation methods (ab initio, atomistic).
- Skills in programming and numerical simulation in HPC parallel environments.
- A good command of spoken and written English is required.
- Active participation in group dynamics in contexts of close collaboration with experimenters and industry.

Contexte de travail

The candidate will benefit from interactions with theoreticians and experimentalists of CNRS/SPINTEC and other labs in France and abroad. The project is part of a solid network of experimental and theoretical collaborations in Europe and the United States.

Contraintes et risques

None