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Portal > Offres > Offre UMR7647-HOLVAC-001 - Modification des propriétés des matériaux avec les nanoclusters de silicium non tétraédriques (H/F)

Modification of material properties with non-tetrahedral silicon nanoclusters (M/F)

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Français - Anglais

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General information

Reference : UMR7647-HOLVAC-001
Workplace : PALAISEAU
Date of publication : Thursday, July 23, 2020
Type of Contract : FTC Technical / Administrative
Contract Period : 12 months
Expected date of employment : 1 November 2020
Proportion of work : Full time
Remuneration : For a beginner engineer (<3 years of experience), the gross monthly salary is around 2,510 €.
Desired level of education : PhD
Experience required : 1 to 4 years


The research work proposed in the framework of the present prematuration project of the CNRS Innovation department concerns the application of results obtained during a Ph.D. thesis defended in 2016 and during the on-going work thereafter. The existing results have already given rise to the filing of a first patent and to a publication. Our findings experimentally confirm the theoretical predictions on the properties of aromatic silicon nanoclusters (SiNCs) that form in low-pressure silane-based plasmas. The subject of the present project is the adjustment of material work functions using these SiNCs. The research will be carried out as part of a large national collaboration involving specialists working on negative ion sources for heating fusion plasmas in Tokamaks, plasma thrusters for satellites and deep space exploration and etc… The experimental work will also concern the theoretically predicted THz behavior of these SiNCs and other fascinating properties. During the project, the successful candidate will also determine the optimum plasma and deposition conditions for the growth of the SiNCs and the ideal layer thickness appropriate for each of the targeted applications.


The successful candidate will carry out the following activities:
- Continuation of the work already started by improving the performance of the used reactor
- Search for optimal plasma conditions for the growth of SiNCs nanoclusters
- Deposition and characterization of thin films of SiNCs
- Sample preparation for our various partners by looking for the most suitable properties for each application
- Participation in the characterization work carried out by our partners


- Knowledge of plasma deposition techniques
- Knowledge of some means of characterization of thin silicon films such as TEM, SEM, XRD, FTIR, ellipsometry etc ...
- Motivation, enthusiasm, and desire to explore new aspects of silicon materials for wider, more important and immediate applications

Work Context

This project is part of a CNRS prematuration program which aims to support the first development stages of innovative projects, with the goal to bring their research results to a sufficiently advanced level and allowing, directly or following a maturation phase, their transfer to industry or business creation (“start-up”).
The research activities will mainly take place at the Laboratory of Physics of Interfaces and Thin Layers (LPICM) at the Ecole Polytechnique, Palaiseau, France.
The work of the laboratory is oriented around the physics and technologies of new materials and electronic/optical devices employing its thin-film expertise: for example, photovoltaic solar cells and sensors. The success of the laboratory is based on a strong synergy between experiments, applications and theoretical modeling.

Constraints and risks

As in all laboratory experiments, there is a certain risk due to the handling of gases such as silane at very low concentration for the production of silicon nanoclusters.

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