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Portail > Offres > Offre UMR7588-PAOATK-001 - Postdoc (H/F): Croissance épitaxiale de superréseaux chalcogénures pour des applications thermoélectriques

Epitaxial growth of chalcogenide superlattices for thermoelectric applications

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Français - Anglais

Date Limite Candidature : mercredi 25 mai 2022

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General information

Reference : UMR7588-PAOATK-001
Workplace : PARIS 05
Date of publication : Wednesday, May 4, 2022
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 1 September 2022
Proportion of work : Full time
Remuneration : monthly salary will be between 2743 et 3161 euro brut, depending on experience
Desired level of education : PhD
Experience required : Indifferent


-The aim of this project is to grow chalcogenide superlattice thin films by molecular beam epitaxy and to explore their thermoelectric properties.
Thin film growth techniques, operating far from thermodynamic equilibrium, allow novel material combinations and structures to be investigated that are not accessible by bulk crystal growth methods. In particular, superlattices provide a route to understand better both the interfacial phonon scattering and the charge transfer between different material layers. The ultimate aim of this project is to then independently manipulate the thermal conductivity and the electrical properties of the thin film to optimize the thin-films' thermoelectric figure of merit.


The post-doc will carry out, in collaboration with other researchers involved in the project:
• The growth optimization of the film superlattices by molecular beam epitaxy
• The structural characterisation of the thin films (by X-ray diffraction, and transmission electron microscopy)
• The characterization of the thermal properties of the thin films by thermoreflectance measurements
• The meaurement of the electrical and Seebeck transport of the thin films.


The candidate should have:
• A good experimental background in thin film growth, ideally in molecular beam epitaxy.
• A condensed-matter physics background including experience in X-ray diffraction measurements of thin-films.
Experience in the following techniques would also be appreciated:
• Transport measurements (electrical and/or thermal)
• Optical characterisation of thin films.
• Device fabrication in a clean-room.

Work Context

The successful candidate will join the “Growth and properties of thin films” group at the Institute of NanoSciences of Paris (INSP), which belongs to the Science Faculty of the Sorbonne University. During this project, the candidate will also work closely with members of other groups at the INSP and at a neighbouring institute, the Institut de minéralogie, de physique des matériaux et de cosmochimie (IMPMC), all of whom are based at the Jussieu site of the Sorbonne University, located in the centre of Paris.

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