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Portail > Offres > Offre UMR6508-ELIVAN-014 - CDD CHERCHEUR H/F


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Français - Anglais

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General information

Reference : UMR6508-ELIVAN-014
Workplace : CAEN
Date of publication : Friday, January 11, 2019
Type of Contract : FTC Scientist
Contract Period : 17 months
Expected date of employment : 1 March 2019
Proportion of work : Full time
Remuneration : Between 2550 and 3540 euros gross a month according to experience
Desired level of education : PhD
Experience required : Indifferent


In the framework of the ANR Polynash project, we are recruiting a postdoctoral fellow on the growth and study of functional oxides on low cost substrates. Materials such as complex oxides offer a wide variety of properties such as ferromagnetism, ferroelectricity, multiferroism ..., which are not present in semiconductors, and are very promising for the development of a new generation of materials in microelectronics, oxide-based electronics: "oxitronics". For that we will deposit these complex oxides on nanosheets. These nanosheets (graphene like) have lattices parameters allowing them to be used as a germination site in order to induce epitaxy of complex oxides. Moreover these 2D-NS have the particularity of being able to be deposited on all types of support without surface limitation such as silicon. Thus we will study the growth of complex oxides and their integration on universal substrates. This will be the first step in order develop a breakthrough technology in the field of silicon-based devices.


The post doc will synthesize thin films of functional oxides by pulsed laser ablation on nanosheets. Their morphological characterization and physical properties (transport, magnetism, optics, etc.) will be performed and compared to the properties of films deposited on monocrystalline substrates.


A PhD in materials science or equivalent discipline is expected. Experience in thin film deposition and physical characterization would be welcome.

Work Context

This position is part of a ANR Polynash project. The post-doc will be carried out within the CRISMAT laboratory thin-film activity in collaboration with Versailles and Rennes laboratories.

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