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Portail > Offres > Offre UMR5213-STETRI-010 - Chercheur.e postdoctoral H/F : conception et modélisation de transistors de puissance en diamant

Postdoctoral researcher : design and modeling of diamond power transistors

This offer is available in the following languages:
Français - Anglais

Date Limite Candidature : vendredi 25 juin 2021

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General information

Reference : UMR5213-STETRI-010
Workplace : TOULOUSE
Date of publication : Friday, June 4, 2021
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 1 September 2021
Proportion of work : Full time
Remuneration : Between € 2648 and € 3054 gross monthly
Desired level of education : PhD
Experience required : 1 to 4 years


The recruited agent will carry out research mainly related to the modeling and design of power transistors in ultra wide bandgap materials such as diamond. Simulation studies will be conducted, covering physical aspects and circuit-wide interactions. An important part of the work will be linked to the development of compact models representative of the real performance and physical phenomena of power transistors. A complementary activity of design and modification of the architectures of the transistors will be carried out in connection with the analyzes of the simulations.


The research activities will be:
- Compact electro-thermal modeling of transistors, in conjunction with the bibliography, physical analysis and characterization campaigns
- Circuit –level simulation studies using compact models to identify the limitations and improvements needed, as well as quantify the impact of this technology at the system level
- Participation in power transistor characterization campaigns, in particular pulsed IV measurements, small signal characterization, electro-thermal environment
- Participation in digital simulations and optimal design of transistors
Complementary activities will concern:
- Writing of scientific articles and communication in conferences
- Participation in project monitoring meetings and presentations of technical advances
- Supervision of trainee (s)
- Interfacing with external services and project partners


Candidates must:
- master simulation tools such as SPICE, VHDL (-AMS), Cadence, as well as calculation and modeling tools such as Matlab / Octave. Finite element type numerical simulation skills will be a plus (eg Comsol, TCAD, Silvaco).
- have in-depth knowledge of electronics, ideally with experience in electro-thermal modeling of transistors and power components with large bandgap and / or ultrawide bandgap materials.
- have a good knowledge of experimental characterization techniques for transistors, and links with power electronics and electronics
- demonstrate an aptitude for teamwork and within the framework of an international collaborative project, in particular through previous experience of active participation in such a project
- have a good level and a mastery of French and English languages

Work Context

This post-doctoral research work will be carried out in the "Power Converter" (CS) research group of the Laplace laboratory as part of an ongoing European project DCADE (Diamond Converter and Arc fault DEtection for high-altitude operations). Laplace (Plasma and Energy Conversion Laboratory) is affiliated with CNRS, INP-Toulouse and UPS. The laboratory has more than 300 people and represents the highest concentration of research in electrical engineering and Plasma in France. In particular, it is the only one to cover the “Plasma / materials / systems” continuum in an integrated manner. The CS research group is made up of 30 full-time equivalents, and the main investigations relate to original concepts of nested, superimposed and / or magnetically coupled switching cell associations in parallel, giving rise to complex circuits with very often very branched topology. The research and technologies thus developed address both new energy management functionalities and high performance applications in terms of waveform quality, compact filtering and three-dimensional integration with high specific power.

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