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Reference : UMR5129-MARCLO-013
Workplace : GRENOBLE
Date of publication : Friday, January 10, 2020
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 1 April 2020
Proportion of work : Full time
Remuneration : 2617€ and 3017€ gross montly
Desired level of education : PhD
Experience required : 1 to 4 years
GaN and AlGaN are promising candidates for high-frequency, high-power, and high-temperature microelectronics due to their wide bandgaps, high electron mobility, good thermal conductivity, large 2-dimensional electron gas (2DEG) density at AlGaN/GaN interface, and chemical stability. Moreover, structures with gate dielectrics (dielectrics with a high dielectric constant (k)) are expected to be more efficient than those with a Schottky contact because of better thermal stability, higher breakdown voltage, and lower gate leakage current which is crucial for the realization of low on-resistance and normally-off high-power field-effect transistors (FETs). Nevertheless, the major issue is the preparation of device-quality high-k/III-nitride interfaces in order to obtain the lowest interface trap state densities (Dit). In this context, the position involves (i) the optimization of the interface between high-k gate-oxide and GaN semiconductor, the fabrication and the electrical characterization of metal-oxide-semiconductor capacitors (MOSCAPS) and (ii) the elaboration and the characterization of AlN on silicon or on GaN semiconductor by PE-ALD.
More precisely, we will perform several high-k gate-oxide : Al2O3, HfO2, and HfO2/Al2O3 bilayers which will be deposited by ALD at 250/300 °C using trimethylaluminum (TMA) for Al2O3 and tetrakis(ethylmethylamino) hafnium (TEMAH) for HfO2, respectively, with H2O as the oxidant. AlN oxide will be also investigated and will be elaborated by PE-ALD tool. X-ray photoelectrons spectroscopy (XPS) will be performed to characterize the chemical composition and the quality of oxide/GaN interface. Fabrication of MOSCAPS and elaboration of AlN will be performed in the PTA-Grenoble.
- The optimization of the interface between high-k gate-oxide and GaN semiconductor, the fabrication and the electrical characterization of metal-oxide-semiconductor capacitors (MOSCAPS)
- The elaboration and the characterization of AlN on silicon or on GaN semiconductor by PE-ALD.
1 / theoretical knowledge
- Physics of components
- English written and spoken
2 / operational know-how:
- clean room work: mastery of safety rules
-Micro- and nano-manufacturing
3 / Social skills:
- Relational qualities (teamwork)
- Being able to comply with the instructions (work in a CEA environment with the need to be able to apply CEA and CNRS regulations)
LTM, the “Laboratoire des Technologies de la Microélectronique” is a research laboratory created in 1999. Since 1999, LTM and LETI have developed a strong partnership. LTM position within LETI brings to the laboratory the capability to conduct applied research in a rich technological environment allowing, among others, unique partnerships with key players of the Microelectronics industry. LTM working force is now about 90 people leading fundamental and applied research in the field of Nanotechnologies (4 teams). LTM is member of the FMNT federation of laboratories on MINATEC with IMEP-LAHC and LMGP since 2003. New scientific development on nanomaterial elaboration and nanotechnology are introduced. The LTM makes a commitment in the development of new technological basic bricks specifically dedicated to the addressing and the organization of nano-objects important for the nanoelectronic devices exploiting the properties of individual semiconducting or metallic nanobjects (nanodots and nanowires).
Constraints and risks
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