En poursuivant votre navigation sur ce site, vous acceptez le dépôt de cookies dans votre navigateur. (En savoir plus)
Portail > Offres > Offre UMR5129-ERWPAR-006 - Postdoc (H/F) pour le développement de procédés plasma pulsé du GaN pour des applications puissance

postdoc(HF) in pulsed plasma etching process of GaN for power applications

This offer is available in the following languages:
Français - Anglais

Date Limite Candidature : lundi 13 février 2023

Assurez-vous que votre profil candidat soit correctement renseigné avant de postuler. Les informations de votre profil complètent celles associées à chaque candidature. Afin d’augmenter votre visibilité sur notre Portail Emploi et ainsi permettre aux recruteurs de consulter votre profil candidat, vous avez la possibilité de déposer votre CV dans notre CVThèque en un clic !

General information

Reference : UMR5129-ERWPAR-006
Nombre de Postes : 1
Workplace : GRENOBLE
Date of publication : Friday, January 13, 2023
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 1 April 2023
Proportion of work : Full time
Remuneration : between 2 805€ and 4 140 € gross per month depending on experience
Desired level of education : PhD
Experience required : 5 to 10 years


This work is part of a local government project Nano 2026. The overall objective of the project is to enable the maturation of GaN technologies on Si to realize a high electron mobility transistor (HEMT) for power applications. The technological lock today is the too high density of traps at the dielectric/III-V semiconductor interface. One of the steps identified as critical for this trap density is the plasma etching of GaN. The objective of this postdoc is to develop a plasma etching process that does not damage the GaN. A promising way to achieve this goal is to use the pulsed plasma technologies, available at LTM/CNRS, which offer a multitude of possibilities to structure the material without damage


The work will be performed on the 300mm etching reactor of the LTM located in the CEA/Leti clean rooms, and equipped with pulsed plasma technologies.
-Development and characterization of GaN pulsed plasma etching processes
-Characterization of GaN surfaces after etching by XPS, AFM and cathodoluminescence
-Realization of a MOS capacitor to test electrically the damage generated by the plasma
-Valorization of the results in the form of articles or communications to conferences


1)Theoretical knowledge: plasma etching mechanisms, III-V semiconductor physics, materials science
2) Technical skills:
-Plasma etching processes,
-Plasma diagnostics (mass spectrometer, flux probe..), -Physicochemical characterization of materials (ellipsometry, XPS, FTIR..)
-Electrical characterization I-V
3) Skills to valorize results by writing articles or presenting at conferences
4) Other skills: written/spoken English, Matlab programming knowledge

Work Context

This work will be carried out at the Microelectronics Technology Laboratory (LTM), a joint research unit of the CNRS and the University of Grenoble Alpes (UGA) (UMR 5129) located on the CEA-LETI-MINATEC site in Grenoble. About one hundred people work at LTM: 30 researchers or teacher-researchers, 18 engineers and technicians, 31 PhD students and 16 post-docs. The laboratory's activities are positioned at the border between upstream academic research and industrial research. Over the years, the LTM has developed several direct partnerships with various players in the micro/nanoelectronics industry, notably STMicroelectronics in Crolles and Applied Materials in Santa Clara (USA). The candidate will join the "PROSPECT" department of LTM. This department aims at developing innovative processes and materials for advanced nano- and opto-electronic devices.

Constraints and risks

work in clean room

Additional Information


We talk about it on Twitter!