General information
Reference : UMR5129-ERWPAR-006
Nombre de Postes : 1
Workplace : GRENOBLE
Date of publication : Friday, January 13, 2023
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 1 April 2023
Proportion of work : Full time
Remuneration : between 2 805€ and 4 140 € gross per month depending on experience
Desired level of education : PhD
Experience required : 5 to 10 years
Missions
This work is part of a local government project Nano 2026. The overall objective of the project is to enable the maturation of GaN technologies on Si to realize a high electron mobility transistor (HEMT) for power applications. The technological lock today is the too high density of traps at the dielectric/III-V semiconductor interface. One of the steps identified as critical for this trap density is the plasma etching of GaN. The objective of this postdoc is to develop a plasma etching process that does not damage the GaN. A promising way to achieve this goal is to use the pulsed plasma technologies, available at LTM/CNRS, which offer a multitude of possibilities to structure the material without damage
Activities
The work will be performed on the 300mm etching reactor of the LTM located in the CEA/Leti clean rooms, and equipped with pulsed plasma technologies.
-Development and characterization of GaN pulsed plasma etching processes
-Characterization of GaN surfaces after etching by XPS, AFM and cathodoluminescence
-Realization of a MOS capacitor to test electrically the damage generated by the plasma
-Valorization of the results in the form of articles or communications to conferences
Skills
1)Theoretical knowledge: plasma etching mechanisms, III-V semiconductor physics, materials science
2) Technical skills:
-Plasma etching processes,
-Plasma diagnostics (mass spectrometer, flux probe..), -Physicochemical characterization of materials (ellipsometry, XPS, FTIR..)
-Electrical characterization I-V
3) Skills to valorize results by writing articles or presenting at conferences
4) Other skills: written/spoken English, Matlab programming knowledge
Work Context
This work will be carried out at the Microelectronics Technology Laboratory (LTM), a joint research unit of the CNRS and the University of Grenoble Alpes (UGA) (UMR 5129) located on the CEA-LETI-MINATEC site in Grenoble. About one hundred people work at LTM: 30 researchers or teacher-researchers, 18 engineers and technicians, 31 PhD students and 16 post-docs. The laboratory's activities are positioned at the border between upstream academic research and industrial research. Over the years, the LTM has developed several direct partnerships with various players in the micro/nanoelectronics industry, notably STMicroelectronics in Crolles and Applied Materials in Santa Clara (USA). The candidate will join the "PROSPECT" department of LTM. This department aims at developing innovative processes and materials for advanced nano- and opto-electronic devices.
Constraints and risks
work in clean room
Additional Information
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