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Portail > Offres > Offre IRL2958-NADWER-031 - Chercheur / Graphene/ boron nitride heterostructure electronic devices H/F

Seacher / Graphene/ boron nitride heterostructure electronic devices H/F

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Français - Anglais

Date Limite Candidature : vendredi 21 mai 2021

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General information

Reference : IRL2958-NADWER-031
Workplace : METZ
Date of publication : Friday, April 30, 2021
Type of Contract : FTC Scientist
Contract Period : 24 months
Expected date of employment : 1 July 2021
Proportion of work : Full time
Remuneration : 2675 à 3084 EUROS BRUT SELON EXPERIENCE
Desired level of education : 5-year university degree
Experience required : 1 to 4 years


The researcher will be in charge of the electronic transport aspect of the project. The program combines the expertise of the host group, with 20 years of experience in the development of graphene for electronics, and the nitrides research team of CNRS / Metz, experts in 2D materials microscopy from ONERA - Paris and the graphene surface group of the CNRS / Institut Néel in Grenoble. Numerous experiments will also be carried out in the Atlanta unit of the CNRS-Georgia Tech international research laboratory.


This project concerns the development of graphene / boron nitride (BN) epitaxial hetero-structures and the study of the electronic properties of a new generation of electronic devices. The underlying physical concept is waveguide-type electronic transport which has recently been discovered [1] in epigraphene nanostructures * [2] showing quantified ballistic conductance at room temperature down to tens of microns. These exceptional properties reveal a topologically protected edge state conductance and are related to the ground state of graphene at the point of charge neutrality. Epigraphene gives access, for the first time, to this singular state which has hitherto remained elusive.
We recently demonstrated that large-scale BN / epigraphene / SiC heterostructures produced by metal-organic vapor phase epitaxy [3] are of high structural quality and exhibit the clean BN / graphene interface necessary to preserve the intact properties of graphene. Electronic devices will be built directly from these heterostructures and measured.


- Previous experience in device fabrication techniques or in material surface characterization / deposition techniques is welcome.

- solid training in condensed matter physics or materials science, experienced in low temperature electronic transport measurements.

Work Context

The host group has a long experience in the development of graphene for electronics. The work will be carried out within the nitride group of the IRL CNRS-GT laboratory in Metz (Georgia Tech Lorraine campus ¼ hour from the city center), in close collaboration with the epitaxial graphene team at Georgia Tech in Atlanta, specializing in physics and nanotechnology from fundamental to applications

Constraints and risks


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