Informations générales
Intitulé de l'offre : Post Doctorant INTERNATIONAL RESEARCH LAB H/F
Référence : IRL2958-CRICOR-001
Nombre de Postes : 1
Lieu de travail : METZ
Date de publication : lundi 13 mars 2023
Type de contrat : CDD Scientifique
Durée du contrat : 12 mois
Date d'embauche prévue : 1 mai 2023
Quotité de travail : Temps complet
Rémunération : 2833 monthly gross adjustable according to experience
Niveau d'études souhaité : Doctorat
Expérience souhaitée : Indifférent
Section(s) CN : Micro and nanotechnologies, micro and nanosystems, photonics, electronics, electromagnetism, electrical energy
Missions
The project aims to develop a process for the fabrication of mechanically removable ultra-thin InGaN LEDs using a new technology that allows for the mechanical release of III-nitride devices using h-BN. This technology has been developed at IRL GT-CNRS and involves a lateral control of the h-BN quality using patterned sapphire with a SiO2 mask to achieve localized van der Waals epitaxy of high-quality GaN-based device structures. The process involves individual devices being picked and placed on a foreign substrate without the need for a dicing step, thus preserving device performance. The goal of the project is to use this technology to produce ultra-thin InGaN LEDs that are less than 10 microns thick and 50μm long, which can be mechanically removed from a substrate and packaged onto a flexible device.
Activités
The postdoc will work on the different technological bricks of the epitaxial growth by MOVPE of the LED structures and he/she will perform the materials characterization (XRD, AFM, SEM, PL, CL and electrical measurements).
Compétences
The ideal candidate should have a PhD in Engineering, Physics or Materials Science, with experience in MOVPE epitaxy and characterizations.
Contexte de travail
IRL