Missions

The project aims to develop a process for the fabrication of mechanically removable ultra-thin InGaN LEDs using a new technology that allows for the mechanical release of III-nitride devices using h-BN. This technology has been developed at IRL GT-CNRS and involves a lateral control of the h-BN quality using patterned sapphire with a SiO2 mask to achieve localized van der Waals epitaxy of high-quality GaN-based device structures. The process involves individual devices being picked and placed on a foreign substrate without the need for a dicing step, thus preserving device performance. The goal of the project is to use this technology to produce ultra-thin InGaN LEDs that are less than 10 microns thick and 50μm long, which can be mechanically removed from a substrate and packaged onto a flexible device.

Activités

The postdoc will work on the different technological bricks of the epitaxial growth by MOVPE of the LED structures and he/she will perform the materials characterization (XRD, AFM, SEM, PL, CL and electrical measurements).

Compétences

The ideal candidate should have a PhD in Engineering, Physics or Materials Science, with experience in MOVPE epitaxy and characterizations.

Contexte de travail

IRL