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Portal > Offres > Offre IRL2958-CRICOR-037 - Post Doctorant IRL Georgia Tech - CNRS en croissance de couches phase vapeur aux organométalliques (MOVPE) H/F

Post-doctoral fellow IRL Georgia Tech - CNRS in vapor-phase layer growth with organometallics (MOVPE) M/F

This offer is available in the following languages:
- Français-- Anglais

Application Deadline : 09 December 2025 23:59:00 Paris time

Ensure that your candidate profile is correct before applying.

General information

Offer title : Post-doctoral fellow IRL Georgia Tech - CNRS in vapor-phase layer growth with organometallics (MOVPE) M/F (H/F)
Reference : IRL2958-CRICOR-037
Number of position : 1
Workplace : METZ
Date of publication : 18 November 2025
Type of Contract : Researcher in FTC
Contract Period : 12 months
Expected date of employment : 16 December 2025
Proportion of work : Full Time
Remuneration : €3041.58 gross monthly salary depending on experience
Desired level of education : Doctorate
Experience required : Indifferent
Section(s) CN : 08 - Micro and nanotechnologies, micro and nanosystems, photonics, electronics, electromagnetism, electrical energy

Missions

This postdoctoral position is part of the Carnot project. The aim of this project is to develop an innovative method for growing and transferring thick layers of gallium nitride (GaN) onto metal substrates for applications in power electronics

Activities

The growth of GaN on Al₂O₃ or Si substrates results in highly strained layers containing numerous defects. Consequently, a different approach is proposed, consisting of using hBN/Al₂O₃ pseudo-substrates for the growth of thick GaN layers and their transfer onto metal substrates. The objective of this position is to study the growth of thick GaN layers by metal organic vapour phase epitaxy (MOVPE) on hBN/Al₂O₃ pseudo-substrates. The candidate will examine different growth parameters as well as the stress in the epitaxial layers.

Skills

The ideal candidate should hold a PhD in engineering, physics or materials science, with experience in MOVPE epitaxy and characterisation

Work Context

IRL 2958 Georgia Tech - CNRS The position is in a sector subject to the protection of scientific and technical potential (PPST) and therefore, in accordance with regulations, requires your arrival to be authorised by the competent authority of the MESR.

The position is located in a sector under the protection of scientific and technical potential (PPST), and therefore requires, in accordance with the regulations, that your arrival is authorized by the competent authority of the MESR.

Constraints and risks

Working in a bilingual environment Experimental work involving the handling of neutral gases (H₂ and N₂) and active gases (organometallic compounds, hydrides)