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Portal > Offres > Offre UPR10-MICPEF-012 - CDD Chercheur en physique des semi-conducteurs H/F

CDD Researcher in semiconductor physics H / F

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Français - Anglais

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General information

Reference : UPR10-MICPEF-012
Workplace : VALBONNE
Date of publication : Wednesday, October 09, 2019
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 15 November 2019
Proportion of work : Full time
Remuneration : between 2500 and 2700 € gross monthly according to experience
Desired level of education : PhD
Experience required : 1 to 4 years


The aim is to develop zinc Oxide based THz devices emitting at room temperature in the framework of the European project ZOTERAC ( This project will be realized in close collaboration with the five European partners.


The candidate will develop methods for growth and characterizations in order to fabricate complex structures (several hundred of ZNO/ZnMgO layers), which should be controlled at an atomic level. He/She will study the influence of the growth conditions on the device properties thanks to atomic scale characterizations in order to optimize the structures and to provide a room temperature THz quantum cascade laser.


Semiconductor physics, molecular beam epitaxy, microscopy (AFM, TSEM, TEM) diffraction

Work Context

The Research Center for Heteroepitaxy and its Applications (CRHEA - UPR10) is a CNRS research laboratory specializing in the epitaxy of large bandgap semiconductor materials such as III nitride materials (GaN, AlN), zinc oxide (ZnO), silicon carbide (SiC) and their micro- and nanofabrication in a clean room. CRHEA also studies 2D materials such as graphene, or boron nitride.

The main areas covered by the CRHEA concern the energy transition, the communications of the future, the environment and health. CRHEA also conducts fundamental studies in nanoscience and crystal growth.

High energy bandgap materials are key elements for power electronics, ultra-high frequency electronics, LED-based lighting and new generations of micro-displays. CRHEA visible and ultraviolet light sources have multiple applications for lighting, biophotonics and water purification. CRHEA also develops components in the THz domain, photonic circuits, advanced optical components based on metasurfaces, spintronic applications, sensors and is involved in the development of quantum technologies.

The laboratory has eight molecular beam epitaxy growth reactors and six vapor phase growth reactors. It also has tools for structural characterization of materials and a clean room for micro and nanofabrication.
Currently, components that emit and detect in very long wavelengths (30-300μm, or 1 to 10 THz-THz- range) are limited in terms of performance and operating temperature. Broad bandgap materials such as ZnO or GaN have particular properties offering tremendous unexplored potential to lift this technology lock.
A condition to achieve this goal is to master the growth of these materials without any crystalline defects. For example, on ZnO, we use massive substrates and a new growth reactor (MBE). For GaN, so-called 'semi-polar' orientations are developed within the laboratory.
Through these objectives of optoelectronic components, more fundamental approaches are approached in the field of infra-red and THz: plasmons, inter-subband polarons, inter-subband excitons physics, metamaterials, etc ...

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