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Portal > Offres > Offre UPR10-MICPEF-005 - CDD chercheur en optique, modélisations numériques et nanotechnologies H/F

CDD researcher in metasurface, meta-optics, numerical modeling and nanofabrication

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Français - Anglais

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General information

Reference : UPR10-MICPEF-005
Workplace : VALBONNE
Date of publication : Thursday, April 11, 2019
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 15 July 2019
Proportion of work : Full time
Remuneration : € 2,555 gross monthly
Desired level of education : 5-year university degree
Experience required : 1 to 4 years

Missions

Develop effective metasurface devices in the visible and near infrared to control the properties of light (polarization, intensity, phase profile of the wavefront of light).

Activities

The candidate will have to study the problem of the extension of the nanostructuration technology to the visible and near infrared spectral domain. It will develop metasurfaces with non-absorbent dielectric materials in the visible and possibly UV such as GaN, AlN, AlGaN and ZnO. Implementation of nanostructured devices in the visible and near infrared in the Fourier plane of a light beam so as to improve the control properties of the wavefront by playing on reciprocal space. The goal is to make major advances in the new field of optical meta-systems.

Skills

Metasurfaces, numerical modeling, nanotechnologies. Development of new optical devices for wavefront control.

Work Context

The Research Center for Heteroepitaxy and its Applications (CRHEA) is a CNRS research laboratory specialized in the epitaxy of large bandgap semiconductor materials such as III nitride materials (GaN, AlN) , zinc oxide (ZnO), silicon carbide (SiC) and their micro- and nanofabrication in a clean room. CRHEA also studies 2D materials such as graphene, or boron nitride.
The main areas covered by the CRHEA concern the energy transition, the communications of the future, the environment and health. CRHEA also conducts fundamental studies in nanoscience and crystal growth.
High energy bandgap materials are key elements for power electronics, ultra-high frequency electronics, LED-based lighting and new generations of micro-displays. CRHEA visible and ultraviolet light sources have multiple applications for lighting, biophotonics and water purification. CRHEA also develops components in the THz domain, photonic circuits, advanced optical components based on metasurfaces, spintronic applications, sensors and is involved in the development of quantum technologies.
The laboratory has eight molecular beam epitaxy growth reactors and six vapor phase growth reactors. It also has tools for structural characterization of materials and a clean room for micro and nanofabrication.
Context of the integration team:
The combination of top-down and bottom-up approaches makes it possible to exploit all the possibilities offered by the nanostructures and it is the strength of the Nanotechnologies team, which uses GaN and ZnO as materials of choice. Our interests range from basic materials science, including MBE and MOCVD growth to new materials (eg ZnMnO, rare earth nitrides and oxynitrides), to the development of more complex nanophotonic systems. These include metasurfaces, which allow the manufacture of ultrathin-ultralight optoelectronic components such as metalens, optical microcavities. These are the ideal playground for testing effects in quantum electrodynamics and obtaining Bose-Einstein condensates in a semiconductor environment. Finally, a nanophotonic platform based on GaN nanowires is able to stimulate biological cells with unprecedented spatial resolution. In addition, the manipulation of the spin of carriers and / or excitons within these photonic structures, thanks to our magnetic materials, opens the possibility of coupling spin and photons in an electrically addressable interface.

Constraints and risks

Risks related to radiation

Additional Information

Additional information possible from Patrice GENEVET
pg@crhea.cnrs.fr
Hiring date can be postponed by 2 months depending on the nationality of the candidate (procedures for obtaining a Reception Agreement with the Prefectural Services) and taking into account the new status of the RHA of the host unit (CV complete and detailed mandatory).

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