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Portal > Offres > Offre UMR8635-KARBRE-007 - Posdoc Diamant de type n dopé phosphore : épitaxie, propriétés et composants électroniques (H/F)

Posdoc n-type phosphorus-doped diamond: epitaxy, properties and electronic devices

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Français - Anglais

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General information

Reference : UMR8635-KARBRE-007
Workplace : VERSAILLES
Date of publication : Friday, June 26, 2020
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 1 September 2020
Proportion of work : Full time
Remuneration : From 2 728 euros gross monthly depending on experience
Desired level of education : PhD
Experience required : Indifferent


The young researcher will join the “Diamond for Electronics” team (DIAM) of the Groupe d'Etude de la Matière Condensée in Versailles (GEMaC, The mission will consist in the realization of diamond electronic components, as a part of the MOVETODIAM ANR project, including the epitaxy of phosphorus-doped diamond films, the study of their optical properties and the device fabrication.


The candidate will develop researches on electronic devices made of diamond for applications to power electronics. Elementary components, such as Schottky or n-i-p diodes, will be processed by photolitography on the synthesized films (design of masks, resin deposition by spin-coater, etc.) and electrically characterized by current-voltage (I(V) and capacitive C(V) measurements. The growth of n-type diamond films by microwave plasma assisted chemical vapor deposition (MPCVD) will be optimized for the targeted devices. For that, the young researcher will have the opportunity to investigate the properties of the epitaxial thin layers using various analysis techniques like cathodoluminescence spectroscopy (CL), atomic force microscopy (AFM), secondary ion mass spectrometry (SIMS) …


The applicant must have defended a doctoral thesis in material sciences or condensed matter, micro-nanotechnologies or a similar domain. A good knowledge of semiconductor physics and electronic devices is essential. Experience in growing materials using techniques such as molecular beam epitaxy or chemical vapor deposition will be appreciated. An experience in the characterization techniques mentioned above and/or significant experience with cleanroom technology processes would also be a plus. A good command of English, both written and spoken, is essential, as well as the ability to communicate, write reports/articles and work in team.

Work Context

The GEMaC laboratory activities are based on a common expertise in physics and materials sciences in the fields of wide band gap semiconductors, optics of nanometric systems, functional oxides and switchable molecular materials. One of the GEMaC strengths lies in the material growth activity. The GEMaC laboratory benefits from a large experimental park bringing together microscopies (e.g. AFM, SEM), spectroscopies (e.g. Raman, CL), physico-chemical analysis (e.g. SIMS), transport measurements (e.g. Hall effect)...
The DIAM team conducts cutting-edge research on physical properties and crystal growth of diamond. It is internationally recognized due to more than 15 years of scientific research mainly focused on understanding the effects of defects/impurities on the optical/electrical/structural properties of diamonds. It is also the only French team controlling the synthesis of n-type homoepitaxied diamond films. The obtained n-type electrical conductivities are at the international state of the art, so it is time to start developing elementary components for preparing future applications in power electronics. The proposed job will be carried out within the framework of the MOVETODIAM ANR project aiming to produce a vertical power MOSFET in diamond with the consortium which brings together the LSPM laboratory in Villetaneuse, the IBS Company in Peynier and the LAAS laboratory in Toulouse.

Constraints and risks

Experimental work in clean room, handling of chemicals and toxic gases

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