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Portail > Offres > Offre UMR8191-GREDIP-004 - Post-doctorant(e) en nanofabrication de mémoires magnétiques H/F

Research engineer in nanofabrication of magnetic memories

This offer is available in the following languages:
Français - Anglais

Date Limite Candidature : samedi 12 décembre 2020

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General information

Reference : UMR8191-GREDIP-004
Workplace : GRENOBLE
Date of publication : Saturday, October 31, 2020
Type of Contract : FTC Technical / Administrative
Contract Period : 18 months
Expected date of employment : 1 March 2021
Proportion of work : Full time
Remuneration : 2648€ à 3054€ gross monthly according to experience
Desired level of education : PhD
Experience required : 1 to 4 years

Missions

Low-power electronics benefits from the use of non-volatile magnetic memory (MRAM) integrated with CMOS devices to build nonvolatile (NV) logic. This solution is of high interest for connected objects and IoT. The basic element of an MRAM is the Magnetic Tunnel Junction (MTJ), is com-posed of a magnetic reference layer with a fixed magnetization direction and a storage layer that has a reversible magnetization, separated by a thin insulating barrier.
The ANR project MISTRAL is proposing innovative solutions for improving the energy footprint of the cryptography embedded in connected objects while keeping the security of the device at its highest standard. It is therefore needed to benchmark lightweight cryptography algorithms and solutions to be proposed as countermeasures against fault attacks. These benchmarks are needed to report electrical parameters of silicon requirements and power consumption. From this analysis, specifications of countermeasures against fault attacks can be proposed, taking into account the benefits from STT-MRAM/CMOS integration.
To realize this benchmarking it is necessary to realize nanofabricated MRAM devices with 20 to 100nm lateral size and their electrical characterization to get a better insight on the stack and its sensitivity to various classes of attack.

Activities

- Nanofabrication of magnetic tunnel junctions to nano pillars of 20-100nm lateral dimension
- Yield improvement of critical fabrication steps (ion-beam etching, electrical contact)
- Structural (SEM, FIB) and electrical characterization
- Process flow improvements to sub-10nm lateral sizes. Development of process modules.

Skills

- PhD in nanotechnology, nanoelectronics. Successful demonstrations of nanofabrication in a clean room environment are mandatory.
- Affinity for experimental work is required and some knowledge of process modules (e-beam lithography, ion beam etching, reactive ion etching, metallization) is a plus.
- Electrical characterization and reporting of process results.
- Good team-work capacity (interactions with other team members and technical staff

Work Context

Spintec is a research laboratory affiliated with CEA, CNRS and Univ. Grenoble Alpes of about 100 persons. Our mission is to bring fundamental research in spintronic devices to innovative industrial applications. We have been developing MRAM solutions since 2002 with the development and integration of process flows. The developed concepts lead to several start-up companies in the field (Crocus Technology, Hprobe, Antaios). The nanofabrication process takes place in a modern cleanroom environment using tools of the PTA technology platform (http://pta-grenoble.com/) belonging to the Renatech network. The project will be carried out in the host laboratory in Grenoble in the context of a multi-partner project.

Additional Information

Please provide a CV, a list of publications, motivation letter (one page max) as well as 2 references for further contact (telephone or e-mail).

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