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Portail > Offres > Offre UMR5129-MARCLO-037 - Chercheur en microélectronique (H/F) : Hétéro-épitaxie par MOCVD de semiconducteurs III-As et III-P sur silicium et fabrication de sources de lumière sur silicium

Post-doctoral position in microelectronics(F/M) : MOCVD heteroepitaxy of III-As and III-P semiconductors on silicon substrate and fabrication of photodetectors

This offer is available in the following languages:
Français - Anglais

Date Limite Candidature : vendredi 30 octobre 2020

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General information

Reference : UMR5129-MARCLO-037
Workplace : GRENOBLE,GRENOBLE
Date of publication : Friday, October 09, 2020
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 1 January 2021
Proportion of work : Full time
Remuneration : Between 2648.79 à 3054.06€ gross monthly
Desired level of education : PhD
Experience required : 1 to 4 years

Missions

III-V semiconductor integration on a Si platform constitutes a major challenge for the coming years in the world of microelectronics. These materials, by their direct bandgap, offer the possibility of realizing light emission ranging from visible to infrared (ultra-violet for III-N). These components are currently produced by epitaxy on GaAs, InP or GaSb substrates. A more exploratory path consists in growing the structure of interest directly on the silicon substrate, which has, among other things, the advantage of eliminating the III-V substrate and of working directly on Si CMOS compatible substrates. Moreother, elements of column III and V being considered to be critical (Sb, P, In, Ga in particular), this also makes it possible to limit their consumption.
In this context, the mission consists in producing light source in the visible and in the near infrared region, from alloys based on arsenic and phosphorus materials. The candidate will initially focus on optimizing the growth by MOCVD of these materials, on 200 and 300 mm silicon substrates. The main objective will be to develop solutions to reduce the density of structural defects such as dislocations. In a second step, the candidate will participate in the fabrication and characterization of PIN diode structures.

Activities

- MOCVD hetero-epitaxy of (In, Ga, Al) (As, P) alloys on silicon substrates
- Structural and optical characterization of the layers
- Fabrication and characterization of PIN Diodes
- Results analysis

Skills

- Theoretical knowledge
o Physics / chemistry / materials science
o English spoken and written
- Operational know-how
o Growth and characterization of materials
o Micro / nano fabrication
o Physico-chemical characterization

- Know-how
o Relational quality (teamwork)
o Being able to comply with the instructions (work in a CEA environment with the need to be able to apply CEA and CNRS regulations)

Work Context

The LTM is a joint CNRS / Grenoble Alpes University research unit, comprising 6 teams, including 4 research teams, and employs around 90 people. The laboratory is located on the CEA-LETI site in Grenoble. The recruited person will work within the “Nanomaterials & Integration” team, in collaboration with the other members of this team and CEA-Leti staff.

Constraints and risks

The work will be mainly done in clean room

Additional Information

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