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Reference : UMI2958-NADWER-015
Workplace : METZ
Date of publication : Monday, November 04, 2019
Type of Contract : FTC Scientist
Contract Period : 12 months
Expected date of employment : 1 December 2019
Proportion of work : Full time
Remuneration : 2643 EUROS BRUT MENSUEL
Desired level of education : PhD
Experience required : 1 to 4 years
III-Nitrides Growth Researcher by MOVPE
Develop hBN and its alloys with other nitrides III for operation in new device structures
MOVPE growth, structural, optical and electrical characterization, device fabrication.
Experience in III_nitride materials growth and characterization is highly desired
III-nitride alloys based on wurtzite AlN, GaN, and InN have enabled the commercialization of blue and green light-emitting diodes (LED) and laser diodes. In addition, High-voltage (HV) gallium nitride (GaN) 650-950 V field-effect transistors (FETs) are becoming the next standard for power conversion. This futuristic materials system also contains layered hexagonal boron nitride (hBN) which is the least explored when compared to the other III-nitride materials. BN system by its very nature is interesting for exploitation in graphene electronics as substrates and passivation layer. Recently, MOCVD grown layered BN has been used as a template for growing III-nitride device structures which added better performances, more functionality and flexibility in processing to the robust III-nitride devices. Further, alloying it with other 3D bonded III-nitride may bring up more interesting properties and functionalities. In the framework of this project, we propose to explore and develop hBN and it alloys with other III-nitrides for exploitation in novel device structures. This could ultimately lead the way towards the realization of high efficiency neutron detectors and deep UV optoelectronic candidate is expected to work on the different modules of the epitaxial growth of boron nitride, characterization and device fabrication at the UMI GT-CNRS.
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