En poursuivant votre navigation sur ce site, vous acceptez le dépôt de cookies dans votre navigateur. (En savoir plus)
Portail > Offres > Offre IRL2958-NADWER-027 - Chercheur / Hétérostructure épitaxiale au nitrure de bore-épigraphène pour la nanoélectronique H/F

searcher Nitrure de Bore épitaxié sur épigraphène pour l'électronique M/F

This offer is available in the following languages:
Français - Anglais

Date Limite Candidature : mercredi 10 mars 2021

Assurez-vous que votre profil candidat soit correctement renseigné avant de postuler. Les informations de votre profil complètent celles associées à chaque candidature. Afin d’augmenter votre visibilité sur notre Portail Emploi et ainsi permettre aux recruteurs de consulter votre profil candidat, vous avez la possibilité de déposer votre CV dans notre CVThèque en un clic !

Faites connaître cette offre !

General information

Reference : IRL2958-NADWER-027
Workplace : METZ
Date of publication : Wednesday, February 17, 2021
Type of Contract : FTC Scientist
Contract Period : 24 months
Expected date of employment : 1 April 2021
Proportion of work : Full time
Remuneration : 2675.27 0 3084.60 EUROS ACCORDING TO EXPERIENCE
Desired level of education : 5-year university degree
Experience required : 1 to 4 years


This project concerns the development of graphene/boron nitride (BN) epitaxial hetero-structures, to study the electronic properties of a novel generation of electronic devices. The underlying physical concept is the waveguide-type electronic transport that was recently discovered [1] in epigraphene* nanostructures [2] showing room temperature quantized ballistic conductance up to tens of microns.
These exceptional properties reveal topologically protected edge state conductance and are related to the graphene ground state at the charge neutrality point. Epigraphene gives access, for the first time, to this singular state that has remained elusive so far.
We have recently demonstrated that large-scale BN/epigraphene/SiC heterostructures produced by metalorganic vapor phase epitaxy [3] are of high structural quality and present the clean BN/graphene interface required to preserve graphene pristine properties. Electronic devices will be built directly
from these heterostructures and measured.
This project combines the expertise of the hosting group, with 20 years of experience in developing graphene for electronics, and the nitride research team at CNRS/Metz, the 2D material microscopy experts at ONERA – Paris, and the graphene surface group at CNRS/ Institut Néel in Grenoble. The project is developed in strong collaboration with the Georgia Institute of Technology in Atlanta, with
which extended collaborative exchanges will be organized.


The successful candidate will actively participate in the fabrication of samples (BN deposits for the fabrication of SiC / EG / BN heterostructures, structural studies), the design and production of devices by lithography, measurements electronic transport at low temperature, analysis and interpretation of data.


Doctorate in physics or equivalent
- Experience in electronic transport measurements and lithography techniques
- Material science skills a plus
- Good communication skills in English (written and spoken).

Work Context

The host group has a long experience in the development of graphene for electronics. The work will be carried out within the nitride group of the IRL CNRS-GT laboratory in Metz (Georgia Tech Lorraine campus ¼ hour from the city center), in close collaboration with the epitaxial graphene team at Georgia Tech in Atlanta, specializing in physics and nanotechnology from fundamental to applications

Constraints and risks


We talk about it on Twitter!